Dmitrii V. Andreev, V. Andreev, Marina Konuhova, A. Popov
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引用次数: 0
摘要
我们提出了一种对金属-绝缘体-半导体(MIS)器件的栅极电介质进行晶圆级测试的技术,方法是通过向电介质中注入高场电子的方式,将注入电流密度提高到设定水平。这种方法能够在所有测试过程中控制栅极电介质电荷状态的变化。所提出的技术可以评估薄介质的完整性,同时控制其降解的电荷效应。该方法尤其可用于制造工艺,以控制基于 MIS 结构的集成电路 (IC)。在本文中,我们提出了一种先进的栅极电介质 Bounded J-Ramp 测试算法,并在监控生产制造的 MIS 器件的栅极电介质质量时得到了认可。我们发现,尽管电介质的劣化率存在很大差异,但采用所提出的方法进行测试时获得的正电荷最大值与在恒定电流下以有界 J 值向电介质注入电荷时获得的正电荷最大值相近。
Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Devices
We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a mode of increasing injection current density up to a set level. This method provides the capability to control a change in the charge state of the gate dielectric during all the testing. The proposed technique makes it possible to assess the integrity of the thin dielectric and at the same time to control the charge effects of its degradation. The method in particular can be used for manufacturing processes to control integrated circuits (ICs) based on MIS structures. In the paper, we propose an advanced algorithm of the Bounded J-Ramp testing of the gate dielectric and receive its approval when monitoring the quality of the gate dielectrics of production-manufactured MIS devices. We found that the maximum value of positive charge obtained when tested by the proposed method was a value close to that obtained when the charge was injected into the dielectric under a constant current with a Bounded J value despite large differences in the rate of degradation of the dielectric.