通过在热金刚石基底上进行离子注入高效制造高密度色心组合

E. Nieto Hernandez, G. Andrini, A. Crnjac, M. Brajkovic, F. Picariello, E. Corte, V. Pugliese, M. Matijević, P. Aprà, V. Varzi, J. Forneris, M. Genovese, Z. Siketic, M. Jaksic, S. Ditalia Tchernij
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引用次数: 0

摘要

金刚石中的氮空位(NV)中心是量子技术(包括量子计量和传感)中最有前途的系统之一。要实现对外部场的高灵敏度,一种很有前景的策略是利用大型 NV 中心集合体,而通过离子注入法制造 NV 中心集合体受到金刚石晶格中引入的辐射损伤量的限制。在这项研究中,我们展示了一种在热靶基底(>550 °C)上通过高能量植入 MeV N2+ 离子来提高 NV 中心密度的方法。结果表明,与室温植入相比,高温工艺提高了金刚石不可逆地转化为石墨相所需的空位密度阈值,从而实现了更高密度的集合。此外,还研究了在不同温度下用 MeV N2+ 和 Mg+ 离子植入金刚石基底上的色心形成效率,结果表明 NV 中心和镁空位(MgV)中心的形成效率随植入温度的升高而增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Efficient Fabrication of High-Density Ensembles of Color Centers via Ion Implantation on a Hot Diamond Substrate

Efficient Fabrication of High-Density Ensembles of Color Centers via Ion Implantation on a Hot Diamond Substrate

Nitrogen-vacancy (NV) centers in diamonds are one of the most promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In this work an approach is demonstrated to increase the density of NV centers upon the high-fluence implantation of MeV N2+ ions on a hot target substrate (>550 °C). The results show that with respect to room-temperature implantation, the high-temperature process increases the vacancy density threshold required for the irreversible conversion of diamond to a graphitic phase, thus enabling to achieve higher density ensembles. Furthermore, the formation efficiency of color centers is investigated on diamond substrates implanted at varying temperatures with MeV N2+ and Mg+ ions revealing that the formation efficiency of both NV centers and magnesium-vacancy (MgV) centers increases with the implantation temperature.

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