Ajeet Gupta, Avneesh Kumar, Surbhi Surbhi, Mudit P. Srivastava, D. Rana
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引用次数: 0
摘要
氧化锌(ZnOS)纳米薄膜通过水热沉积法沉积在 p 型硅和玻璃衬底上,沉积温度为 200ºC。利用 X 射线衍射(XRD)图和场效应扫描电子显微镜(FESEM)获得了氧化锌(ZnOS)薄膜的晶体学信息和形态分析。利用能量色散 X 射线光谱(EDX)检测了氧化锌(ZnOS)薄膜的化学成分。紫外-可见(UV-Vis)和光致发光(PL)光谱用于光学分析。在功率密度为 30 mW/cm2 的可见光环境下,通过 I-V 特性对 ZnOS 薄膜进行了电学和电光测量。研究发现,氧化锌(ZnOS)薄膜是在可见光下进行简单响应光检测的极佳范例。ZnOS 薄膜的响应时间为 1.46 秒,恢复时间为 1.32 秒。沉积薄膜的响应率为 7.08×102 mA/W。关键词:氧化锌氧化锌 水热法 异质结 光传感器
Facile Growth of Zinc Oxysulfide Nano Thin Film-based Visible Light Photosensor by Hydrothermal Method
Zinc oxysulfide (ZnOS) nano-thin film has been deposited on a p-type silicon and glass substrate via the hydrothermal deposition method at a temperature of 200ºC. The crystallographic information and morphological analysis of zinc oxysulfide (ZnOS) thin film have been obtained using X-ray diffraction (XRD) patterns and field effect scanning electron microscopy (FESEM). The ZnOS thin film chemical composition was examined using energy-dispersive X-ray spectroscopy (EDX). Ultraviolet-visible (UV-Vis) and photoluminescence (PL) spectroscopy have been utilized for optical analysis. The electrical and electro-optical measurements of ZnOS thin film have been carried out by I-V characteristics in the visible light environment with a power density of 30 mW/cm2. Zinc oxysulfide (ZnOS) thin film was found to be an excellent example of simple responsive photodetection in visible light. The ZnOS thin film has a response time of 1.46 s and a recovery time is equal to 1.32 s. The specific detectivity of the deposited thin film was found to be 3.81×108 Jones. The responsivity of the deposited thin film is found 7.08×102 mA/W. Keywords: Zinc oxysulfide, hydrothermal method, heterojunction, photosensor.
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.