Dongxia Wei, Bingtian Guo, Adam A. Dadey, J. Andrew McArthur, Junwu Bai, Seth R. Bank, Joe C. Campbell
{"title":"具有全介电非晶锗金属表面的 Al0.3InAsSb pi-n 光电二极管的宽带量子效率提升","authors":"Dongxia Wei, Bingtian Guo, Adam A. Dadey, J. Andrew McArthur, Junwu Bai, Seth R. Bank, Joe C. Campbell","doi":"10.1002/adpr.202400090","DOIUrl":null,"url":null,"abstract":"<p>Transparent amorphous germanium (a-Ge) has emerged as a promising material for engineering nanostructures and metasurfaces, offering significant potential for enhancing the performance of photonic devices in the short-wavelength infrared (SWIR) spectrum. Herein, the successful application of a-Ge metasurfaces with a truncated pyramid profile to enhance the external quantum efficiency (EQE) of a digital alloy Al<sub>0.3</sub>InAsSb p–i–n photodiode across a broad-wavelength range in the SWIR is presented. The experimental findings demonstrate a broadband enhancement in EQE. Two metasurface samples are designed to emphasize different-wavelength ranges. Notably, 51% improvement in EQE at 1550 nm and 125% enhancement at 2000 nm is achieved. Finite-difference time domain simulations show that the observed EQE improvement originates from the reduction of reflection and electromagnetic field enhancement. This study underscores the promising role of a-Ge metasurfaces in advancing the capabilities of SWIR photodetectors. It lays the groundwork for further exploration in optoelectronic device enhancements.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":null,"pages":null},"PeriodicalIF":3.7000,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400090","citationCount":"0","resultStr":"{\"title\":\"Broadband Quantum Efficiency Enhancement of Al0.3InAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces\",\"authors\":\"Dongxia Wei, Bingtian Guo, Adam A. Dadey, J. Andrew McArthur, Junwu Bai, Seth R. Bank, Joe C. Campbell\",\"doi\":\"10.1002/adpr.202400090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Transparent amorphous germanium (a-Ge) has emerged as a promising material for engineering nanostructures and metasurfaces, offering significant potential for enhancing the performance of photonic devices in the short-wavelength infrared (SWIR) spectrum. Herein, the successful application of a-Ge metasurfaces with a truncated pyramid profile to enhance the external quantum efficiency (EQE) of a digital alloy Al<sub>0.3</sub>InAsSb p–i–n photodiode across a broad-wavelength range in the SWIR is presented. The experimental findings demonstrate a broadband enhancement in EQE. Two metasurface samples are designed to emphasize different-wavelength ranges. Notably, 51% improvement in EQE at 1550 nm and 125% enhancement at 2000 nm is achieved. Finite-difference time domain simulations show that the observed EQE improvement originates from the reduction of reflection and electromagnetic field enhancement. This study underscores the promising role of a-Ge metasurfaces in advancing the capabilities of SWIR photodetectors. It lays the groundwork for further exploration in optoelectronic device enhancements.</p>\",\"PeriodicalId\":7263,\"journal\":{\"name\":\"Advanced Photonics Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2024-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400090\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Photonics Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202400090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Photonics Research","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202400090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Broadband Quantum Efficiency Enhancement of Al0.3InAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces
Transparent amorphous germanium (a-Ge) has emerged as a promising material for engineering nanostructures and metasurfaces, offering significant potential for enhancing the performance of photonic devices in the short-wavelength infrared (SWIR) spectrum. Herein, the successful application of a-Ge metasurfaces with a truncated pyramid profile to enhance the external quantum efficiency (EQE) of a digital alloy Al0.3InAsSb p–i–n photodiode across a broad-wavelength range in the SWIR is presented. The experimental findings demonstrate a broadband enhancement in EQE. Two metasurface samples are designed to emphasize different-wavelength ranges. Notably, 51% improvement in EQE at 1550 nm and 125% enhancement at 2000 nm is achieved. Finite-difference time domain simulations show that the observed EQE improvement originates from the reduction of reflection and electromagnetic field enhancement. This study underscores the promising role of a-Ge metasurfaces in advancing the capabilities of SWIR photodetectors. It lays the groundwork for further exploration in optoelectronic device enhancements.