具有全介电非晶锗金属表面的 Al0.3InAsSb pi-n 光电二极管的宽带量子效率提升

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Dongxia Wei, Bingtian Guo, Adam A. Dadey, J. Andrew McArthur, Junwu Bai, Seth R. Bank, Joe C. Campbell
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引用次数: 0

摘要

透明非晶锗(a-Ge)已成为一种前景广阔的工程纳米结构和元表面材料,为提高短波红外(SWIR)光谱中光子器件的性能提供了巨大潜力。本文介绍了成功应用具有截断金字塔轮廓的 a-Ge 元表面来提高数字合金 Al0.3InAsSb pi-n 光电二极管在 SWIR 宽波长范围内的外部量子效率 (EQE)。实验结果表明 EQE 具有宽带增强效果。设计了两个元表面样品来强调不同的波长范围。值得注意的是,在 1550 nm 波长处,EQE 提高了 51%,在 2000 nm 波长处,EQE 提高了 125%。有限差分时域模拟表明,所观察到的 EQE 改善源于反射的减少和电磁场的增强。这项研究强调了 a-Ge 元表面在提高 SWIR 光电探测器性能方面的重要作用。它为进一步探索光电器件的增强奠定了基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Broadband Quantum Efficiency Enhancement of Al0.3InAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces

Broadband Quantum Efficiency Enhancement of Al0.3InAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces

Transparent amorphous germanium (a-Ge) has emerged as a promising material for engineering nanostructures and metasurfaces, offering significant potential for enhancing the performance of photonic devices in the short-wavelength infrared (SWIR) spectrum. Herein, the successful application of a-Ge metasurfaces with a truncated pyramid profile to enhance the external quantum efficiency (EQE) of a digital alloy Al0.3InAsSb p–i–n photodiode across a broad-wavelength range in the SWIR is presented. The experimental findings demonstrate a broadband enhancement in EQE. Two metasurface samples are designed to emphasize different-wavelength ranges. Notably, 51% improvement in EQE at 1550 nm and 125% enhancement at 2000 nm is achieved. Finite-difference time domain simulations show that the observed EQE improvement originates from the reduction of reflection and electromagnetic field enhancement. This study underscores the promising role of a-Ge metasurfaces in advancing the capabilities of SWIR photodetectors. It lays the groundwork for further exploration in optoelectronic device enhancements.

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