氧空位缺陷对 LiMn0.65Fe0.35PO4 阴极结构和电化学行为的影响

Jingpeng Zhang, Xiwen Ke, Yong Wang, Juanjuan Xue
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摘要

氧空位缺陷的存在会严重影响磷酸盐阴极的晶体结构和电化学特性。本研究通过氢等离子体诱导还原法合成了具有不同程度氧空位缺陷的 LiMn0.65Fe0.35PO4 材料。研究发现,晶体表面的氧空位缺陷含量随着氢气(H2)流速的增加而成正比增加。值得注意的是,以 10 mL min-1 的氢气流速制备的 LMFP-3 样品表现出卓越的电化学性能,在 0.1C 下的放电容量为 159.7 mAh g-1,在 5C 下循环 200 次后的容量保持率高达 99.8%。电化学性能的提高归功于 LiMn0.65Fe0.35PO4 材料因存在氧空位缺陷而提高的本征电导率。不过,值得注意的是,过高的 H2 流率会导致 Fe2P 杂质的形成,从而阻碍锂离子(Li+)的扩散。此外,利用密度泛函理论进行的理论计算为观察到的电子传导性改善提供了合理解释。氧空位缺陷的引入导致带隙显著减小,这对提高 LiMn0.65Fe0.35PO4 材料的内在电导率非常有利。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Effect of Oxygen Vacancy Defects on the Structure and Electrochemical Behaviors of LiMn0.65Fe0.35PO4 Cathode
The presence of oxygen vacancy defects significantly impacts the crystal structure and electrochemical attributes of phosphate cathodes. In this investigation, LiMn0.65Fe0.35PO4 materials with varying levels of oxygen vacancy defects were synthesized via hydrogen plasma-induced reduction. It was observed that the content of oxygen vacancy defects on the crystal surface increased proportionately with the rise in hydrogen (H2) flow rate. Notably, the LMFP-3 sample, prepared with an H2 flow rate of 10 mL min-1, demonstrated superior electrochemical performance, characterized by a 159.7 mAh g-1 discharge capacity at 0.1C and a remarkable 99.8% capacity retention at 5C after 200 cycles. This enhancement in electrochemical performance is attributed to the improved intrinsic conductivity of the LiMn0.65Fe0.35PO4 material due to the presence of oxygen vacancy defects. However, it is important to note that an excessively high H2 flow rate can lead to the formation of Fe2P impurities, which hinder lithium ion (Li+) diffusion. Furthermore, theoretical calculations conducted using density functional theory provide a rational explanation for the observed improvement in electronic conductivity. The introduction of oxygen vacancy defects results in a significant reduction in the Band gap, which is highly beneficial for enhancing the intrinsic conductivity of the LiMn0.65Fe0.35PO4 materials.
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