利用线性增加电压的注入式金属-绝缘体-半导体电荷提取法测量有机半导体中的非平衡电荷载流子迁移率

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mile Gao, Paul L. Burn, Gytis Juška, Almantas Pivrikas
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引用次数: 0

摘要

三(4-咔唑酰-9-基苯基)胺(TCTA)是一种通常用于有机发光二极管(OLED)的主电荷和空穴传输材料,我们采用电荷载流子电注入金属-绝缘体-半导体电荷萃取线性增加电压法(i-MIS-CELIV)测量了这种材料中的电荷载流子迁移率。通过采用注入电流 i-MIS-CELIV 方法,可以测量到电荷传输的时间尺度短于标准 MIS-CELIV 通常观察到的传输时间。i-MIS-CELIV 技术能够对未平衡和预俘获的电荷载流子进行实验测量。通过比较 i-MIS-CELIV 和 MIS-CELIV 获得的注入和萃取瞬时电流,可以得出结论:在与 OLED 等光电设备的工作条件相关的时间尺度内,蒸发的 TCTA 纯薄膜中的空穴捕获可以忽略不计。此外,光载流子生成与 i-MIS-CELIV(光 i-MIS-CELIV)相结合,可量化电荷从电极注入 MIS 器件半导体的特性。根据光-i-MIS-CELIV 测量结果,可以发现接触电阻不会限制 TCTA/氧化钼/银界面的注入电流。因此,当 TCTA 用作 OLED 中的空穴传输/电子阻挡层时,它不会显著降低注入电流,并且仍然符合高效 OLED 运行所需的高注入电流密度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Unequilibrated Charge Carrier Mobility in Organic Semiconductors Measured Using Injection Metal–Insulator–Semiconductor Charge Extraction by Linearly Increasing Voltage

Unequilibrated Charge Carrier Mobility in Organic Semiconductors Measured Using Injection Metal–Insulator–Semiconductor Charge Extraction by Linearly Increasing Voltage

The charge carrier mobility in tris(4-carbazoyl-9-ylphenyl)amine (TCTA), a host and hole transport material typically used in organic light-emitting diodes (OLEDs), is measured using charge carrier electrical injection metal–insulator–semiconductor charge extraction by linearly increasing voltage (i-MIS-CELIV). By employing the injection current i-MIS-CELIV method, charge transport at time scales shorter than the transit times typically observed in standard MIS-CELIV is measured. The i-MIS-CELIV technique enables the experimental measurement of unequilibrated and pretrapped charge carriers. Through a comparison of injection and extraction current transients obtained from i-MIS-CELIV and MIS-CELIV, it is concluded that hole trapping is negligible in evaporated neat films of TCTA within the time-scales relevant to the operational conditions of optoelectronic devices, such as OLEDs. Furthermore, photocarrier generation in conjunction with i-MIS-CELIV (photo-i-MIS-CELIV) to quantify the properties of charge injection from the electrode to the semiconductor of the MIS devices is utilized. Based on the photo-i-MIS-CELIV measurements, it is observed that the contact resistance does not limit the injection current at the TCTA/molybdenum oxide/silver interface. Therefore, when TCTA is employed as the hole transport/electron-blocking layer in OLEDs, it does not significantly reduce the injection current and remains compatible with the high injection current densities required for efficient OLED operation.

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