锥形阻抗变换对 TRL 解嵌误差的影响

IF 6.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
João Louro;Luís C. Nunes;Filipe M. Barradas;Pedro M. Cabral;José C. Pedro
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引用次数: 0

摘要

这项工作源于这样一种认识,即在变换阻抗直通反射线路(TRL)校准中,随机测量误差的灵敏度会受到阻抗变换器与被测设备(DUT)之间阻抗差异的影响。通过对理论分析、模拟和 TRL 测量的深入探讨,本研究证实,在阻抗变换介质上进行去嵌入操作的准确性与从发射器 DUT 端看到的 Thevenin 阻抗和 DUT 阻抗之间的差异密切相关。一个值得注意的发现是,将这一差值最小化可增强去嵌入过程对随机测量误差的适应能力,这对精确建模技术是有利的,并证明了在设计 DUT 接入结构时考虑这些概念的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Impact of a Taper Impedance Transformation on the TRL De-Embedding Error
This work originates from the realization that, in a transformed impedance thru-reflect-line (TRL) calibration, the sensitivity to random measurement errors is affected by impedance discrepancies between the impedance transformer and the device-under-test (DUT). Through a thorough exploration that includes theoretical analysis, simulations and TRL measurements, this study establishes that the accuracy of de-embedding operations on a transformed impedance medium is intricately tied to the difference between the Thevenin impedance seen from the DUT-side of the launcher and the DUT impedance. A noteworthy finding is that minimizing this difference enhances the resilience of the de-embedding process against random measurement errors, being advantageous for precision modeling techniques, and demonstrating the importance of considering those concepts when designing an access structure to a DUT.
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来源期刊
CiteScore
10.70
自引率
0.00%
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审稿时长
8 weeks
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