{"title":"在基于垂直多层石墨烯纳米带（V-MLGNR）的互联中应用高介电材料以提高传输性能","authors":"Peng Xu , Huan Huang , Fa Zou , Lei Xie","doi":"10.1016/j.micrna.2024.207926","DOIUrl":null,"url":null,"abstract":"<div><p>In order to solve the electrical performance limitations of horizontal multilayer graphene nanoribbon (H-MLGNR) based interconnect, a new geometric structure of vertical multilayer graphene nanoribbon (V-MLGNR) based interconnect is proposed in this paper. A numerical model for H-MLGNR and V-MLGNR based interconnects is established to investigate the performance in time and frequency domain, where the high-k dielectric materials (HKDM) are introduced for improving their transmission performance. The computation results demonstrate that the delay time for H-MLGNR and V-MLGNR based interconnects with embedded BaTiO<sub>3</sub>–Ni case can be reduced over 89.601 % and 93.723 % in comparison to the original H-MLGNR and V-MLGNR based interconnects, respectively. The corresponding 3-dB bandwidth for them can be expanded over 1.928 and 2.957 times, respectively. Moreover, it is manifested that the delay time of V-MLGNR based interconnect for the original, embedding the HfO<sub>2</sub>, TiO<sub>2</sub>, SrTiO<sub>3</sub>, BaTiO<sub>3</sub>, 6.0 vol% BaTiO<sub>3</sub>–Ni and 12.0 vol% BaTiO<sub>3</sub>–Ni cases can be reduced over 11.644 %, 13.269 %, 16.851 %, 22.311 %, 27.589 %, 33.608 % and 46.556 % as compared with the conventional H-MLGNR based interconnect, respectively. Meanwhile the corresponding 3-dB bandwidth of the former for the original, embedding the HfO<sub>2</sub>, TiO<sub>2</sub>, SrTiO<sub>3</sub>, BaTiO<sub>3</sub>, 6.0 vol% BaTiO<sub>3</sub>–Ni and 12.0 vol% BaTiO<sub>3</sub>–Ni cases can be enhanced over 1.113, 1.126, 1.155, 1.207, 1.266, 1.366 and 1.737 times as compared with the latter, respectively. In addition, the signal integrity of the proposed V-MLGNR based interconnects with embedded HKDM is greater than H-MLGNR based interconnects, while the power consumption of the former is slightly higher than the latter. Therefore, the proposed new interconnect structure concerning the V-MLGNR with embedded HKDM would be rewarding to enhance transmission performance of interconnect system in VLIS circuits.</p></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Applying the high-k dielectric materials in vertical multilayer graphene nanoribbon (V-MLGNR) based interconnect for improving transmission performance\",\"authors\":\"Peng Xu , Huan Huang , Fa Zou , Lei Xie\",\"doi\":\"10.1016/j.micrna.2024.207926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In order to solve the electrical performance limitations of horizontal multilayer graphene nanoribbon (H-MLGNR) based interconnect, a new geometric structure of vertical multilayer graphene nanoribbon (V-MLGNR) based interconnect is proposed in this paper. A numerical model for H-MLGNR and V-MLGNR based interconnects is established to investigate the performance in time and frequency domain, where the high-k dielectric materials (HKDM) are introduced for improving their transmission performance. The computation results demonstrate that the delay time for H-MLGNR and V-MLGNR based interconnects with embedded BaTiO<sub>3</sub>–Ni case can be reduced over 89.601 % and 93.723 % in comparison to the original H-MLGNR and V-MLGNR based interconnects, respectively. The corresponding 3-dB bandwidth for them can be expanded over 1.928 and 2.957 times, respectively. Moreover, it is manifested that the delay time of V-MLGNR based interconnect for the original, embedding the HfO<sub>2</sub>, TiO<sub>2</sub>, SrTiO<sub>3</sub>, BaTiO<sub>3</sub>, 6.0 vol% BaTiO<sub>3</sub>–Ni and 12.0 vol% BaTiO<sub>3</sub>–Ni cases can be reduced over 11.644 %, 13.269 %, 16.851 %, 22.311 %, 27.589 %, 33.608 % and 46.556 % as compared with the conventional H-MLGNR based interconnect, respectively. Meanwhile the corresponding 3-dB bandwidth of the former for the original, embedding the HfO<sub>2</sub>, TiO<sub>2</sub>, SrTiO<sub>3</sub>, BaTiO<sub>3</sub>, 6.0 vol% BaTiO<sub>3</sub>–Ni and 12.0 vol% BaTiO<sub>3</sub>–Ni cases can be enhanced over 1.113, 1.126, 1.155, 1.207, 1.266, 1.366 and 1.737 times as compared with the latter, respectively. In addition, the signal integrity of the proposed V-MLGNR based interconnects with embedded HKDM is greater than H-MLGNR based interconnects, while the power consumption of the former is slightly higher than the latter. Therefore, the proposed new interconnect structure concerning the V-MLGNR with embedded HKDM would be rewarding to enhance transmission performance of interconnect system in VLIS circuits.</p></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012324001754\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324001754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Applying the high-k dielectric materials in vertical multilayer graphene nanoribbon (V-MLGNR) based interconnect for improving transmission performance
In order to solve the electrical performance limitations of horizontal multilayer graphene nanoribbon (H-MLGNR) based interconnect, a new geometric structure of vertical multilayer graphene nanoribbon (V-MLGNR) based interconnect is proposed in this paper. A numerical model for H-MLGNR and V-MLGNR based interconnects is established to investigate the performance in time and frequency domain, where the high-k dielectric materials (HKDM) are introduced for improving their transmission performance. The computation results demonstrate that the delay time for H-MLGNR and V-MLGNR based interconnects with embedded BaTiO3–Ni case can be reduced over 89.601 % and 93.723 % in comparison to the original H-MLGNR and V-MLGNR based interconnects, respectively. The corresponding 3-dB bandwidth for them can be expanded over 1.928 and 2.957 times, respectively. Moreover, it is manifested that the delay time of V-MLGNR based interconnect for the original, embedding the HfO2, TiO2, SrTiO3, BaTiO3, 6.0 vol% BaTiO3–Ni and 12.0 vol% BaTiO3–Ni cases can be reduced over 11.644 %, 13.269 %, 16.851 %, 22.311 %, 27.589 %, 33.608 % and 46.556 % as compared with the conventional H-MLGNR based interconnect, respectively. Meanwhile the corresponding 3-dB bandwidth of the former for the original, embedding the HfO2, TiO2, SrTiO3, BaTiO3, 6.0 vol% BaTiO3–Ni and 12.0 vol% BaTiO3–Ni cases can be enhanced over 1.113, 1.126, 1.155, 1.207, 1.266, 1.366 and 1.737 times as compared with the latter, respectively. In addition, the signal integrity of the proposed V-MLGNR based interconnects with embedded HKDM is greater than H-MLGNR based interconnects, while the power consumption of the former is slightly higher than the latter. Therefore, the proposed new interconnect structure concerning the V-MLGNR with embedded HKDM would be rewarding to enhance transmission performance of interconnect system in VLIS circuits.
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