Simulation of neural functions based on organic semiconductor/MXene synaptic transistors

Artificial synaptic devices, which are the basic units of neuromorphic computing systems, can perform signal processing with low power consumption. Organic synaptic transistors have attracted significant attention owing to their lightweight and good compatibility with flexible substrates. As per the current state of research both domestically and internationally, the majority of the existing organic synaptic transistors are based on floating gate structures, electret configurations, ferroelectric types. Furthermore, additional capture layers are required for the preparation of these devices. Two-dimensional MXenes have great potential in the preparation of synaptic transistors owing to their efficient multiple energy storage capabilities, excellent metallic conductivity, abundant surface functional groups, hydrophilicity, and layered structure. Therefore, high-performance synaptic transistors based on the two-dimensional material MXene were developed in this study. These transistors not only exhibited excellent memory performance with a memory window above 20 V, but also successfully simulated typical synaptic behaviors, including excitatory postsynaptic current/inhibitory postsynaptic current (EPSC/IPSC), paired-pulse facilitation/paired-pulse depression (PPF/PPD), and long-term plasticity (LTP). Synaptic transistors based on MXenes represent a promising approach for the preparation of high-performance organic synaptic transistors.