Amardeep Sagar, Aman Bhardwaj, Manoj Lamba, Andrei Novitskii, Vladimir Khovaylo, Satyabrata Patnaik
{"title":"半赫斯勒锆镍铅合金热电效应的大幅提升","authors":"Amardeep Sagar, Aman Bhardwaj, Manoj Lamba, Andrei Novitskii, Vladimir Khovaylo, Satyabrata Patnaik","doi":"10.1007/s12034-024-03217-0","DOIUrl":null,"url":null,"abstract":"<p>Ternary half-Heusler (HH) alloys are under intense investigations recently towards achieving high thermoelectric (TE) figure-of-merit (ZT). Of particular interest is the ZrNiPb-based HH alloy, where an optimal value of ZT ~ 0.7 at 773 K has been achieved by co-doping Sn and Bi at Pb site. In this work, we identify an excellent ZT of 1.3 in ZrNi<sub>1+<i>x</i></sub>Pb<sub>0.38</sub>Sn<sub>0.6</sub>Bi<sub>0.02</sub> (<i>x</i> = 0.03, at 773 K) composite alloy. This is achieved by synergistic modulation of electronic as well as thermal properties via introduction of minor phase of full-Heusler (FH) in the HH matrix through compositional tuning approach. These Ni-rich ZrNi<sub>1+<i>x</i></sub>Pb<sub>0.38</sub>Sn<sub>0.6</sub>Bi<sub>0.02</sub> (0 ≤ <i>x</i> ≤ 0.07) alloys were synthesized via energy efficient and time-curbed techniques that involved Arc melting followed by consolidation via spark plasma sintering. These alloys were characterized by XRD and SEM, which show formation of nanocomposites comprising of HH matrix phase and FH secondary minor phases. Enhancement in ZT is mainly attributed to a synchronized increase in power factor (~42%) and ~25% decrease in its thermal conductivity. Here, TE compatibility factor (<i>S</i>) was also calculated for all samples. The value of |S| ~ 2.7 V<sup>−1</sup> (at 773 K) is observed for <i>x</i> = 0.03, which is ~17% higher than bare HH composition (<i>x</i> = 0.0). The theoretically calculated TE device efficiency of best-performing sample ZrNi<sub>1.03</sub>Pb<sub>0.38</sub>Sn<sub>0.6</sub>Bi<sub>0.02</sub> is estimated to be <i>η</i> ~ 13.6%. Our results imply that deliberately controlled fine tuning in compositions of HH compounds through compositional tuning approach would lead to novel off-stoichiometric HH phases with enhanced ZT value for efficient TE device fabrication.</p>","PeriodicalId":502,"journal":{"name":"Bulletin of Materials Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Substantial enhancement in thermoelectric figure-of-merit of half-Heusler ZrNiPb alloys\",\"authors\":\"Amardeep Sagar, Aman Bhardwaj, Manoj Lamba, Andrei Novitskii, Vladimir Khovaylo, Satyabrata Patnaik\",\"doi\":\"10.1007/s12034-024-03217-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Ternary half-Heusler (HH) alloys are under intense investigations recently towards achieving high thermoelectric (TE) figure-of-merit (ZT). Of particular interest is the ZrNiPb-based HH alloy, where an optimal value of ZT ~ 0.7 at 773 K has been achieved by co-doping Sn and Bi at Pb site. In this work, we identify an excellent ZT of 1.3 in ZrNi<sub>1+<i>x</i></sub>Pb<sub>0.38</sub>Sn<sub>0.6</sub>Bi<sub>0.02</sub> (<i>x</i> = 0.03, at 773 K) composite alloy. This is achieved by synergistic modulation of electronic as well as thermal properties via introduction of minor phase of full-Heusler (FH) in the HH matrix through compositional tuning approach. These Ni-rich ZrNi<sub>1+<i>x</i></sub>Pb<sub>0.38</sub>Sn<sub>0.6</sub>Bi<sub>0.02</sub> (0 ≤ <i>x</i> ≤ 0.07) alloys were synthesized via energy efficient and time-curbed techniques that involved Arc melting followed by consolidation via spark plasma sintering. These alloys were characterized by XRD and SEM, which show formation of nanocomposites comprising of HH matrix phase and FH secondary minor phases. Enhancement in ZT is mainly attributed to a synchronized increase in power factor (~42%) and ~25% decrease in its thermal conductivity. Here, TE compatibility factor (<i>S</i>) was also calculated for all samples. The value of |S| ~ 2.7 V<sup>−1</sup> (at 773 K) is observed for <i>x</i> = 0.03, which is ~17% higher than bare HH composition (<i>x</i> = 0.0). The theoretically calculated TE device efficiency of best-performing sample ZrNi<sub>1.03</sub>Pb<sub>0.38</sub>Sn<sub>0.6</sub>Bi<sub>0.02</sub> is estimated to be <i>η</i> ~ 13.6%. 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引用次数: 0
摘要
三元半赫斯勒(HH)合金最近正受到深入研究,以实现较高的热电(TE)功率(ZT)。其中,ZrNiPb 基 HH 合金尤其引人关注,通过在 Pb 位点共掺杂 Sn 和 Bi,该合金在 773 K 时的 ZT 值达到了 0.7。在这项研究中,我们发现 ZrNi1+xPb0.38Sn0.6Bi0.02 (x = 0.03,773 K 时)复合合金的 ZT 值达到了 1.3。这是通过成分调整方法在 HH 基体中引入次相全休斯勒(FH),从而协同调节电子和热性能实现的。这些富含镍的 ZrNi1+xPb0.38Sn0.6Bi0.02 (0 ≤ x ≤ 0.07)合金是通过高效节能的时间控制技术合成的,包括电弧熔化,然后通过火花等离子烧结固结。XRD 和 SEM 对这些合金进行了表征,结果显示形成了由 HH 基体相和 FH 次级次相组成的纳米复合材料。ZT 的增强主要归因于功率因数的同步提高(约 42%)和热导率的约 25%。在此,还计算了所有样品的 TE 相容性因子 (S)。在 x = 0.03 时,观察到 |S| ~ 2.7 V-1(773 K 时),比裸 HH 成分(x = 0.0)高出 ~17%。根据理论计算,性能最好的样品 ZrNi1.03Pb0.38Sn0.6Bi0.02 的 TE 器件效率估计为 η ~ 13.6%。我们的研究结果表明,通过成分调谐方法对 HH 化合物的成分进行有意控制的微调,将产生具有更高 ZT 值的新型非化学计量 HH 相,从而实现高效 TE 器件的制造。
Substantial enhancement in thermoelectric figure-of-merit of half-Heusler ZrNiPb alloys
Ternary half-Heusler (HH) alloys are under intense investigations recently towards achieving high thermoelectric (TE) figure-of-merit (ZT). Of particular interest is the ZrNiPb-based HH alloy, where an optimal value of ZT ~ 0.7 at 773 K has been achieved by co-doping Sn and Bi at Pb site. In this work, we identify an excellent ZT of 1.3 in ZrNi1+xPb0.38Sn0.6Bi0.02 (x = 0.03, at 773 K) composite alloy. This is achieved by synergistic modulation of electronic as well as thermal properties via introduction of minor phase of full-Heusler (FH) in the HH matrix through compositional tuning approach. These Ni-rich ZrNi1+xPb0.38Sn0.6Bi0.02 (0 ≤ x ≤ 0.07) alloys were synthesized via energy efficient and time-curbed techniques that involved Arc melting followed by consolidation via spark plasma sintering. These alloys were characterized by XRD and SEM, which show formation of nanocomposites comprising of HH matrix phase and FH secondary minor phases. Enhancement in ZT is mainly attributed to a synchronized increase in power factor (~42%) and ~25% decrease in its thermal conductivity. Here, TE compatibility factor (S) was also calculated for all samples. The value of |S| ~ 2.7 V−1 (at 773 K) is observed for x = 0.03, which is ~17% higher than bare HH composition (x = 0.0). The theoretically calculated TE device efficiency of best-performing sample ZrNi1.03Pb0.38Sn0.6Bi0.02 is estimated to be η ~ 13.6%. Our results imply that deliberately controlled fine tuning in compositions of HH compounds through compositional tuning approach would lead to novel off-stoichiometric HH phases with enhanced ZT value for efficient TE device fabrication.
期刊介绍:
The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.