M. E. Sayed, S. S. Fouad, E. Baradács, L. I. Soliman, N. F. Osman, M. Nabil, Zoltán Erdélyi
{"title":"区分铜添加剂对氧化锌薄膜复杂电气(介电/阻抗)行为的影响","authors":"M. E. Sayed, S. S. Fouad, E. Baradács, L. I. Soliman, N. F. Osman, M. Nabil, Zoltán Erdélyi","doi":"10.1007/s11051-024-06057-5","DOIUrl":null,"url":null,"abstract":"<p>The copper element (Cu) substituted ZnO with the common formula ZnO<sub>70</sub>/Cu<sub>x</sub>/ZnO<sub>70</sub> (<i>x</i> = 20, 50, and 70 nm) was manufactured using ALD and Dc magnetron sputtering techniques, as a function of the concentration of Cu as interlayer. The effect of the amount of Cu doped in ZnO on the character and dielectric and impedance properties was evaluated. Scanning electron microscopy (SEM) and grazing incident X-ray diffraction (GIXRD) were used to assess the microstructure of the prepared thin films and to obtain grain size measurements. The dielectric properties (<i>ε</i>′, <i>ε</i>″) and the real part of the complex electric modulus (<i>M</i>) were studied as a function of frequency and temperature. A strong dependence and correlation between the dielectric properties and the thickness of the Cu interlayer were investigated. The electrical impedance at different temperatures exhibited a single semicircle, indicating that the response arose from a single capacitive element corresponding to the grains. The conduction of grains and grain boundaries is detected from a complex impedance spectrum by fitting the Nyquist plot with an appropriate electrical circuit. It was revealed that the increase of the thickness of the Cu interlayer of the ZnO/Cu/ZnO system leads to a high dielectric constant and a low value of the real part of the complex electric modulus, which are very good candidates for microwave semiconductor devices and various microelectronic applications.</p>","PeriodicalId":653,"journal":{"name":"Journal of Nanoparticle Research","volume":null,"pages":null},"PeriodicalIF":2.1000,"publicationDate":"2024-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Distinguish the effect of Cu additive on complex electrical (dielectric/impedance) behaviors of ZnO thin films\",\"authors\":\"M. E. Sayed, S. S. Fouad, E. Baradács, L. I. Soliman, N. F. Osman, M. Nabil, Zoltán Erdélyi\",\"doi\":\"10.1007/s11051-024-06057-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The copper element (Cu) substituted ZnO with the common formula ZnO<sub>70</sub>/Cu<sub>x</sub>/ZnO<sub>70</sub> (<i>x</i> = 20, 50, and 70 nm) was manufactured using ALD and Dc magnetron sputtering techniques, as a function of the concentration of Cu as interlayer. The effect of the amount of Cu doped in ZnO on the character and dielectric and impedance properties was evaluated. Scanning electron microscopy (SEM) and grazing incident X-ray diffraction (GIXRD) were used to assess the microstructure of the prepared thin films and to obtain grain size measurements. The dielectric properties (<i>ε</i>′, <i>ε</i>″) and the real part of the complex electric modulus (<i>M</i>) were studied as a function of frequency and temperature. A strong dependence and correlation between the dielectric properties and the thickness of the Cu interlayer were investigated. The electrical impedance at different temperatures exhibited a single semicircle, indicating that the response arose from a single capacitive element corresponding to the grains. The conduction of grains and grain boundaries is detected from a complex impedance spectrum by fitting the Nyquist plot with an appropriate electrical circuit. It was revealed that the increase of the thickness of the Cu interlayer of the ZnO/Cu/ZnO system leads to a high dielectric constant and a low value of the real part of the complex electric modulus, which are very good candidates for microwave semiconductor devices and various microelectronic applications.</p>\",\"PeriodicalId\":653,\"journal\":{\"name\":\"Journal of Nanoparticle Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Nanoparticle Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1007/s11051-024-06057-5\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanoparticle Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s11051-024-06057-5","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Distinguish the effect of Cu additive on complex electrical (dielectric/impedance) behaviors of ZnO thin films
The copper element (Cu) substituted ZnO with the common formula ZnO70/Cux/ZnO70 (x = 20, 50, and 70 nm) was manufactured using ALD and Dc magnetron sputtering techniques, as a function of the concentration of Cu as interlayer. The effect of the amount of Cu doped in ZnO on the character and dielectric and impedance properties was evaluated. Scanning electron microscopy (SEM) and grazing incident X-ray diffraction (GIXRD) were used to assess the microstructure of the prepared thin films and to obtain grain size measurements. The dielectric properties (ε′, ε″) and the real part of the complex electric modulus (M) were studied as a function of frequency and temperature. A strong dependence and correlation between the dielectric properties and the thickness of the Cu interlayer were investigated. The electrical impedance at different temperatures exhibited a single semicircle, indicating that the response arose from a single capacitive element corresponding to the grains. The conduction of grains and grain boundaries is detected from a complex impedance spectrum by fitting the Nyquist plot with an appropriate electrical circuit. It was revealed that the increase of the thickness of the Cu interlayer of the ZnO/Cu/ZnO system leads to a high dielectric constant and a low value of the real part of the complex electric modulus, which are very good candidates for microwave semiconductor devices and various microelectronic applications.
期刊介绍:
The objective of the Journal of Nanoparticle Research is to disseminate knowledge of the physical, chemical and biological phenomena and processes in structures that have at least one lengthscale ranging from molecular to approximately 100 nm (or submicron in some situations), and exhibit improved and novel properties that are a direct result of their small size.
Nanoparticle research is a key component of nanoscience, nanoengineering and nanotechnology.
The focus of the Journal is on the specific concepts, properties, phenomena, and processes related to particles, tubes, layers, macromolecules, clusters and other finite structures of the nanoscale size range. Synthesis, assembly, transport, reactivity, and stability of such structures are considered. Development of in-situ and ex-situ instrumentation for characterization of nanoparticles and their interfaces should be based on new principles for probing properties and phenomena not well understood at the nanometer scale. Modeling and simulation may include atom-based quantum mechanics; molecular dynamics; single-particle, multi-body and continuum based models; fractals; other methods suitable for modeling particle synthesis, assembling and interaction processes. Realization and application of systems, structures and devices with novel functions obtained via precursor nanoparticles is emphasized. Approaches may include gas-, liquid-, solid-, and vacuum-based processes, size reduction, chemical- and bio-self assembly. Contributions include utilization of nanoparticle systems for enhancing a phenomenon or process and particle assembling into hierarchical structures, as well as formulation and the administration of drugs. Synergistic approaches originating from different disciplines and technologies, and interaction between the research providers and users in this field, are encouraged.