W. Kobayashi, Y. Ueda, T. Shindo, M. Mitsuhara, F. Nakajima
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引用次数: 0
摘要
我们提出了一种新型外延层结构,以防止锌扩散到电吸收调制器(EAM)的多量子阱(MQW)层中。在 InP 材料体系中,锌实际上是一种 p 型掺杂剂,但存在着锌无意扩散的技术问题。在这项研究中,我们在掺杂锌的 InP p 型包层和 MQW 之间引入了一个新颖的掺杂 C 的 p 型层,以减少锌扩散并精确定义 pi-n 结界面。通过测量二次离子质谱(SIMS),比较了每个器件 MQW 中的锌浓度。为了弄清扩散锌的减少对 EAM 特性的影响,我们用每种外延结构制造了 EAM,并比较了它们的消光比特性。对每个 EAM 电容的消光比进行的评估成功地证明了采用掺杂 C 层可有效改善 EAM 特性。
Performance improvement of 1.3 μm InAlGaAs MQW modulators grown by MOVPE using C-doped InAl(Ga)As cladding layers
We propose a novel epitaxial layer structure to prevent Zn from diffusing into a multiple quantum well (MQW) layer of an electro-absorption modulator (EAM). Zn is practically employed as a p-type dopant in an InP material system, but there is a technical issue of unintentional Zn diffusion. In this work, we introduce a novel C-doped p-type layer between a Zn-doped p-cladding layer of InP and MQW to both reduce Zn diffusion and accurately define a p-i-n junction interface. The Zn concentrations in the MQW for each device are compared by measuring secondary ion mass spectrometry (SIMS). To clarify how the reduction of diffused Zn affects the EAM characteristics, we fabricate the EAMs with each epitaxial structure and compare their extinction ratio characteristics. The evaluation of extinction ratio per EAM capacitance successfully demonstrates that employing the C-doped layer effectively improves the EAM characteristics.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.