Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren
{"title":"具有有源区位错阻挡层的硅基 850 nm GaAs/GaAsP 应变量子阱激光器","authors":"Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren","doi":"10.1002/adpr.202470018","DOIUrl":null,"url":null,"abstract":"<p><b>Quantum Well Lasers</b>\n </p><p>Benefitting from the interaction of the GaAs/GaAsP strained quantum well and InAlAs active region dislocation blocking layer, in article number 2300348, Jian Li and co-workers show that the threading dislocation penetration to the quantum well region of the silicon-based quantum well lasers can be bended and blocked. By the introduction of this strain compensate stress control structure, the 850 nm room temperature continuous wave emitting silicon-based quantum well laser exhibits a 94.2 mW power output, a 715 Acm<sup>–2</sup> threshold current density, and enhanced reliability.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":null,"pages":null},"PeriodicalIF":3.7000,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202470018","citationCount":"0","resultStr":"{\"title\":\"Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers\",\"authors\":\"Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren\",\"doi\":\"10.1002/adpr.202470018\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><b>Quantum Well Lasers</b>\\n </p><p>Benefitting from the interaction of the GaAs/GaAsP strained quantum well and InAlAs active region dislocation blocking layer, in article number 2300348, Jian Li and co-workers show that the threading dislocation penetration to the quantum well region of the silicon-based quantum well lasers can be bended and blocked. By the introduction of this strain compensate stress control structure, the 850 nm room temperature continuous wave emitting silicon-based quantum well laser exhibits a 94.2 mW power output, a 715 Acm<sup>–2</sup> threshold current density, and enhanced reliability.\\n\\n <figure>\\n <div><picture>\\n <source></source></picture><p></p>\\n </div>\\n </figure></p>\",\"PeriodicalId\":7263,\"journal\":{\"name\":\"Advanced Photonics Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2024-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202470018\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Photonics Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202470018\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Photonics Research","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202470018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers
Quantum Well Lasers
Benefitting from the interaction of the GaAs/GaAsP strained quantum well and InAlAs active region dislocation blocking layer, in article number 2300348, Jian Li and co-workers show that the threading dislocation penetration to the quantum well region of the silicon-based quantum well lasers can be bended and blocked. By the introduction of this strain compensate stress control structure, the 850 nm room temperature continuous wave emitting silicon-based quantum well laser exhibits a 94.2 mW power output, a 715 Acm–2 threshold current density, and enhanced reliability.