Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren
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Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers
Quantum Well Lasers
Benefitting from the interaction of the GaAs/GaAsP strained quantum well and InAlAs active region dislocation blocking layer, in article number 2300348, Jian Li and co-workers show that the threading dislocation penetration to the quantum well region of the silicon-based quantum well lasers can be bended and blocked. By the introduction of this strain compensate stress control structure, the 850 nm room temperature continuous wave emitting silicon-based quantum well laser exhibits a 94.2 mW power output, a 715 Acm–2 threshold current density, and enhanced reliability.
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