C. Z. Gong, B. B. Yang, M. Liu, R. R. Zhang, H. Y. Tong, R. H. Wei, L. Hu, X. B. Zhu, Y. P. Sun
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Mn doping as a simple strategy for improving energy storage in BaBi4Ti4O15 thin films
To obtain high energy storage density in ferroelectric films, polarization and breakdown field Eb are two crucial factors. The inversely coupled relationship between polarization and Eb is commonly observed and it remains a challenge to realize high Eb without deteriorating polarization. Selecting a suitable element doping should largely enhance the Eb since of the optimization of microstructures as well as the decrease in defects, meanwhile the doping should induce extra polarization contribution from lattice distortion. In this work, we reported that Eb can be largely enhanced via Mn doping in BaBi4Ti4O15 thin films due to grain refining, densification, and oxygen vacancy reduction. Interestingly, the polarization is not deteriorated since of the Mn doping effect induced extra polarization from the lattice distortion. Consequently, an ultrahigh energy storage density of 96 J/cm3 with a high efficiency of 76.6% was achieved in BaBi4Ti3.95Mn0.05O15 thin films with excellent stability and reliability. This work will provide a simple and effective route to improve the energy storage in dielectric capacitors.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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