{"title":"通过分子束外延技术在氢钝化硅(111)上生长具有可调谐传输特性的硒化铋薄膜的结构和形态控制","authors":"Junye Li, Peng Zhao, Ting Liu, Chenxu Fang, Xueying Sun, Rui Qi, Haining Ji, Jianwei Wang, Handong Li*, Xiaobin Niu and Zhiming Wang, ","doi":"10.1021/acs.cgd.4c00136","DOIUrl":null,"url":null,"abstract":"<p >The structures of bismuth selenides are formed by periodic or nonperiodic stacking of Bi<sub>2</sub>Se<sub>3</sub> quintuple layers and Bi<sub>2</sub> bilayers, which can be represented by a general formalism of Bi<sub><i>x</i></sub>Se<sub><i>y</i></sub> (<i>x</i>, <i>y</i> > 0). In this work, we report the controlled growth and morphology characteristics of Bi<sub><i>x</i></sub>Se<sub><i>y</i></sub> films on Si(111) by the coevaporation of Bi and Se using molecular beam epitaxy, as well as the basic transport properties. The higher growth temperature limit for achieving stoichiometric Bi<sub>4</sub>Se<sub>3</sub> films of a single-crystalline structure and smooth surface morphology is found to be as low as 350 K. At this temperature, a series of Bi<sub><i>x</i></sub>Se<sub><i>y</i></sub> films with a continuous composition evolution from Bi<sub>4</sub>Se<sub>3</sub> to Bi<sub>2</sub>Se<sub>3</sub> is obtained by precisely adjusting the Bi:Se flux ratios. All Bi<sub><i>x</i></sub>Se<sub><i>y</i></sub> films grown on flat Si(111) share a similar pyramid morphology, owing to a spiral growth mode. By contrast, Bi<sub>4</sub>Se<sub>3</sub> films grown on a vicinal Si(111) surface, for instance, exhibit lower twinning defects due to a step-confined in-plane anisotropic growth mode. Hall effect measurements show that a metal-to-semiconductor-to-metal phase transition occurs in Bi<sub><i>x</i></sub>Se<sub><i>y</i></sub> films with increasing Se composition.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":null,"pages":null},"PeriodicalIF":3.2000,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structure and Morphology Controlled Growth of Bismuth Selenide Films with Tunable Transport Properties on H-Passivated Si(111) by Molecular Beam Epitaxy\",\"authors\":\"Junye Li, Peng Zhao, Ting Liu, Chenxu Fang, Xueying Sun, Rui Qi, Haining Ji, Jianwei Wang, Handong Li*, Xiaobin Niu and Zhiming Wang, \",\"doi\":\"10.1021/acs.cgd.4c00136\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >The structures of bismuth selenides are formed by periodic or nonperiodic stacking of Bi<sub>2</sub>Se<sub>3</sub> quintuple layers and Bi<sub>2</sub> bilayers, which can be represented by a general formalism of Bi<sub><i>x</i></sub>Se<sub><i>y</i></sub> (<i>x</i>, <i>y</i> > 0). In this work, we report the controlled growth and morphology characteristics of Bi<sub><i>x</i></sub>Se<sub><i>y</i></sub> films on Si(111) by the coevaporation of Bi and Se using molecular beam epitaxy, as well as the basic transport properties. The higher growth temperature limit for achieving stoichiometric Bi<sub>4</sub>Se<sub>3</sub> films of a single-crystalline structure and smooth surface morphology is found to be as low as 350 K. At this temperature, a series of Bi<sub><i>x</i></sub>Se<sub><i>y</i></sub> films with a continuous composition evolution from Bi<sub>4</sub>Se<sub>3</sub> to Bi<sub>2</sub>Se<sub>3</sub> is obtained by precisely adjusting the Bi:Se flux ratios. All Bi<sub><i>x</i></sub>Se<sub><i>y</i></sub> films grown on flat Si(111) share a similar pyramid morphology, owing to a spiral growth mode. By contrast, Bi<sub>4</sub>Se<sub>3</sub> films grown on a vicinal Si(111) surface, for instance, exhibit lower twinning defects due to a step-confined in-plane anisotropic growth mode. 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引用次数: 0
摘要
硒化铋的结构是由Bi2Se3五元层和Bi2双层的周期性或非周期性堆叠形成的,可以用BixSey (x, y > 0)的一般形式来表示。在这项工作中,我们利用分子束外延技术,通过 Bi 和 Se 的共蒸发,在 Si(111) 上报告了 BixSey 薄膜的可控生长和形貌特征,以及基本的传输特性。在此温度下,通过精确调节 Bi:Se 通量比,可以获得一系列从 Bi4Se3 到 Bi2Se3 连续成分演化的 BixSey 薄膜。在平坦的 Si(111) 上生长的所有 BixSey 薄膜都具有类似的金字塔形貌,这是螺旋生长模式造成的。相比之下,例如,在沧桑的 Si(111) 表面上生长的 Bi4Se3 薄膜,由于采用了阶跃限制的面内各向异性生长模式,孪生缺陷较低。霍尔效应测量结果表明,随着硒成分的增加,BixSey 薄膜中出现了从金属到半导体再到金属的相变。
Structure and Morphology Controlled Growth of Bismuth Selenide Films with Tunable Transport Properties on H-Passivated Si(111) by Molecular Beam Epitaxy
The structures of bismuth selenides are formed by periodic or nonperiodic stacking of Bi2Se3 quintuple layers and Bi2 bilayers, which can be represented by a general formalism of BixSey (x, y > 0). In this work, we report the controlled growth and morphology characteristics of BixSey films on Si(111) by the coevaporation of Bi and Se using molecular beam epitaxy, as well as the basic transport properties. The higher growth temperature limit for achieving stoichiometric Bi4Se3 films of a single-crystalline structure and smooth surface morphology is found to be as low as 350 K. At this temperature, a series of BixSey films with a continuous composition evolution from Bi4Se3 to Bi2Se3 is obtained by precisely adjusting the Bi:Se flux ratios. All BixSey films grown on flat Si(111) share a similar pyramid morphology, owing to a spiral growth mode. By contrast, Bi4Se3 films grown on a vicinal Si(111) surface, for instance, exhibit lower twinning defects due to a step-confined in-plane anisotropic growth mode. Hall effect measurements show that a metal-to-semiconductor-to-metal phase transition occurs in BixSey films with increasing Se composition.
期刊介绍:
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.