Mengran Sun , Jinlong Shi , Jindong Chen , Chunxiao Li , Jiyong Yao
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引用次数: 0
摘要
红外非线性光学晶体作为激光频率转换的关键器件,被广泛应用于全固态激光器中。BaGa4Se7(BGSe)晶体因其优异的光学特性而备受关注。然而,BGSe 中点缺陷的存在增加了吸收损耗,降低了激光诱导损伤阈值,从而限制了其在高功率中红外激光器中的实际应用。因此,揭示 BGSe 晶体中的缺陷类型及其形成机制至关重要,这有利于设计合理的策略来改善晶体质量。本研究通过光致发光(PL)光谱计算了缺陷活化能,并验证了生长的 BGSe 晶体中存在 GaBa、VSe 和 VBa 三种类型的缺陷。因此,合理设计了在 BaSe 蒸汽下的热退火工艺,以补偿 Ba 和 Se 元素的损失,降低 BGSe 中的缺陷浓度。此外,还利用 X 射线光电子能谱 (XPS) 和光致发光 (PL) 光谱测定了 BGSe 晶体中缺陷的变化。所有实验结果都证实,在 BaSe 蒸汽中退火后,BGSe 中的缺陷浓度大大降低,晶体质量显著提高。
Quality improvement of BaGa4Se7 crystal by annealing in BaSe vapor atmosphere
Infrared nonlinear optical crystals are widely used in all-solid-state lasers as pivotal devices for laser frequency conversion. BaGa4Se7 (BGSe) crystal has attracted much attention due to its excellent optical properties. However, the presence of point defects in BGSe increases the absorption loss and reduces the laser-induced damage threshold, thus limiting its practical application in high-power mid- and far-infrared lasers. Therefore, it is crucial to reveal the types of defects and their formation mechanisms in BGSe crystal, which is conducive to the design of rational strategies to improve the crystal quality. In this work, the defect activation energies were calculated by photoluminescence (PL) spectroscopy and the existence of three types of defects, GaBa, VSe and VBa were verified in the as grown BGSe crystal. Therefore, a thermal annealing process under BaSe vapor was rationally designed to compensate for the loss of Ba and Se elements and to reduce the defect concentration in BGSe. In addition, the changes of defects in BGSe crystal were determined by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectroscopy. All the experimental results confirm that the defect concentration in BGSe decreases greatly and the crystal quality is significantly improved after annealing in BaSe vapor.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.