Hao Li , Jingying Wang , Binghua Song , Heyi Li , Long Geng , Binghuang Duan , Shuo Zhang
{"title":"中子辐照诱导 4H-SiC 结势垒肖特基二极管电气性能退化的机理","authors":"Hao Li , Jingying Wang , Binghua Song , Heyi Li , Long Geng , Binghuang Duan , Shuo Zhang","doi":"10.1016/j.nimb.2024.165452","DOIUrl":null,"url":null,"abstract":"<div><p>4H-SiC junction barrier Schottky diodes (JBS) were irradiated by reactor neutrons. The degradation in the electrical performance of JBS is characterized by I-V and C-V measurement, and the concentrations of traps introduced by irradiation were measured by deep-level transient spectroscopy (DLTS). TCAD simulations were employed to fit the I-V characteristics through adjusting the Schottky barrier height, concentrations of various traps induced by irradiation and the carrier mobility. The experimental results indicate that neutron irradiation would lead to an increase of the forward on-state resistance and reverse breakdown voltage. The simulation results indicates that the increase in forward on-state resistance and reverse breakdown voltage is primarily attributed to carrier capture by acceptor traps. A comparison between trap concentrations obtained from simulations and DLTS highlighted that when neutron fluence exceeds 2 × 10<sup>13</sup> cm<sup>−2</sup>, certain deep-level traps might not be entirely discernible through DLTS, particularly given a maximum measurement temperature of 500 K.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"554 ","pages":"Article 165452"},"PeriodicalIF":1.4000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Mechanism of electrical performance degradation of 4H-SiC junction barrier Schottky diodes induced by neutron irradiation\",\"authors\":\"Hao Li , Jingying Wang , Binghua Song , Heyi Li , Long Geng , Binghuang Duan , Shuo Zhang\",\"doi\":\"10.1016/j.nimb.2024.165452\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>4H-SiC junction barrier Schottky diodes (JBS) were irradiated by reactor neutrons. The degradation in the electrical performance of JBS is characterized by I-V and C-V measurement, and the concentrations of traps introduced by irradiation were measured by deep-level transient spectroscopy (DLTS). TCAD simulations were employed to fit the I-V characteristics through adjusting the Schottky barrier height, concentrations of various traps induced by irradiation and the carrier mobility. The experimental results indicate that neutron irradiation would lead to an increase of the forward on-state resistance and reverse breakdown voltage. The simulation results indicates that the increase in forward on-state resistance and reverse breakdown voltage is primarily attributed to carrier capture by acceptor traps. A comparison between trap concentrations obtained from simulations and DLTS highlighted that when neutron fluence exceeds 2 × 10<sup>13</sup> cm<sup>−2</sup>, certain deep-level traps might not be entirely discernible through DLTS, particularly given a maximum measurement temperature of 500 K.</p></div>\",\"PeriodicalId\":19380,\"journal\":{\"name\":\"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms\",\"volume\":\"554 \",\"pages\":\"Article 165452\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0168583X24002222\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0168583X24002222","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
Mechanism of electrical performance degradation of 4H-SiC junction barrier Schottky diodes induced by neutron irradiation
4H-SiC junction barrier Schottky diodes (JBS) were irradiated by reactor neutrons. The degradation in the electrical performance of JBS is characterized by I-V and C-V measurement, and the concentrations of traps introduced by irradiation were measured by deep-level transient spectroscopy (DLTS). TCAD simulations were employed to fit the I-V characteristics through adjusting the Schottky barrier height, concentrations of various traps induced by irradiation and the carrier mobility. The experimental results indicate that neutron irradiation would lead to an increase of the forward on-state resistance and reverse breakdown voltage. The simulation results indicates that the increase in forward on-state resistance and reverse breakdown voltage is primarily attributed to carrier capture by acceptor traps. A comparison between trap concentrations obtained from simulations and DLTS highlighted that when neutron fluence exceeds 2 × 1013 cm−2, certain deep-level traps might not be entirely discernible through DLTS, particularly given a maximum measurement temperature of 500 K.
期刊介绍：
Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.
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