{"title":"使用碘化铜前驱体在精细结构上选择性生长铜","authors":"Gento Toyoda, Takashi Fuse and Satoshi Yamauchi","doi":"10.35848/1347-4065/ad455c","DOIUrl":null,"url":null,"abstract":"Selective Cu deposition by CVD using copper(I)-iodide (CuI) as the precursor is applied on 0.5 μm- and 1.0 μm-pitch Cu-lines/SiO2 -spaces (L/S) at 370 °C. A confocal laser microscope suggests that the Cu is selectively deposited on the Cu line, not on the space. The average Cu height provided by the cross-sectional profile across the 1.0 μm-pitch L/S, which is linearly increased with total CuI supply, evaluates that the dissociation efficiency of CuI is about 23%. Surface scanning electron microscopy and energy dispersive X-ray spectroscopy clearly show the selective deposition of Cu, but surface roughness on the deposited Cu is increases with the Cu-height. The feature of surface roughness is discussed on the coalescent Cu line at the deposition temperature and the rate-limiting step in the CVD. The selective Cu deposition is also performed on 0.5 μm-pitch L/S, in which the deposition rate is similar but the surface is rougher than on the 1.0 μm-wide line.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Selective Cu growth on fine structures using a Cu-iodide precursor\",\"authors\":\"Gento Toyoda, Takashi Fuse and Satoshi Yamauchi\",\"doi\":\"10.35848/1347-4065/ad455c\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Selective Cu deposition by CVD using copper(I)-iodide (CuI) as the precursor is applied on 0.5 μm- and 1.0 μm-pitch Cu-lines/SiO2 -spaces (L/S) at 370 °C. A confocal laser microscope suggests that the Cu is selectively deposited on the Cu line, not on the space. The average Cu height provided by the cross-sectional profile across the 1.0 μm-pitch L/S, which is linearly increased with total CuI supply, evaluates that the dissociation efficiency of CuI is about 23%. Surface scanning electron microscopy and energy dispersive X-ray spectroscopy clearly show the selective deposition of Cu, but surface roughness on the deposited Cu is increases with the Cu-height. The feature of surface roughness is discussed on the coalescent Cu line at the deposition temperature and the rate-limiting step in the CVD. The selective Cu deposition is also performed on 0.5 μm-pitch L/S, in which the deposition rate is similar but the surface is rougher than on the 1.0 μm-wide line.\",\"PeriodicalId\":14741,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad455c\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad455c","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Selective Cu growth on fine structures using a Cu-iodide precursor
Selective Cu deposition by CVD using copper(I)-iodide (CuI) as the precursor is applied on 0.5 μm- and 1.0 μm-pitch Cu-lines/SiO2 -spaces (L/S) at 370 °C. A confocal laser microscope suggests that the Cu is selectively deposited on the Cu line, not on the space. The average Cu height provided by the cross-sectional profile across the 1.0 μm-pitch L/S, which is linearly increased with total CuI supply, evaluates that the dissociation efficiency of CuI is about 23%. Surface scanning electron microscopy and energy dispersive X-ray spectroscopy clearly show the selective deposition of Cu, but surface roughness on the deposited Cu is increases with the Cu-height. The feature of surface roughness is discussed on the coalescent Cu line at the deposition temperature and the rate-limiting step in the CVD. The selective Cu deposition is also performed on 0.5 μm-pitch L/S, in which the deposition rate is similar but the surface is rougher than on the 1.0 μm-wide line.
期刊介绍:
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS