层状半导体 p-GaSe 中光电导的温度依赖性

IF 1.6 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

The European Physical Journal B Pub Date : 2024-06-25 DOI:10.1140/epjb/s10051-024-00731-2

T. G. Naghiyev, R. F. Babayeva, Y. I. Aliyev

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引用次数: 0

摘要

在 77 ～ 300 K 的温度范围内，实验研究了具有不同初始（77 K 时）暗电阻率（ρ77 = 2-103 ÷ 7-106 Ω-cm）的 p-GaSe 晶体中光导率的温度依赖性。当温度≤250 K 时，在电阻率较高的晶体中，光谱分布、勒克斯-安培特性以及光电导动力学也会随着温度的变化而发生明显变化。所获得的实验结果可以用具有随机宏观缺陷的晶体半导体模型来解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Temperature dependence of photoconductivity in layered semiconductor p-GaSe

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Temperature dependence of photoconductivity in layered semiconductor p-GaSe

The temperature dependence of photoconductivity in p-GaSe crystals with different initial (having at 77 K) dark resistivities (ρ₇₇ = 2·10³ ÷ 7·10⁶ Ω·cm) was experimentally studied in the temperature range of 77 ÷ 300 K. It has been established that in crystals with ρ₇₇ < 10⁴ Ω cm, only the value of the photocurrent changes depending on temperature. At T ≤ 250 K, in the higher-resistivity crystal, the spectral distribution, lux-ampere characteristic, as well as photoconductivity kinetics also change noticeably with a change in temperature. The obtained experimental results are explained on the basis of a model of crystalline semiconductor with random macroscopic defects.