{"title":"具有接近 {112} 习惯面的表面马氏体晶面的动态生长机制","authors":"N. M. Kashchenko","doi":"10.1007/s11182-024-03201-5","DOIUrl":null,"url":null,"abstract":"<p>The second formation stage of a surface martensite (SM) crystal is associated with a layer-by-layer extension of its faces. A dynamic pattern of every layer formation is similar to a rapid crystal growth in the first stage. The role of dislocation nucleation centers belongs to the dislocations framing the crystal-face surfaces. By the example of the (10-1) face it is shown that the proposed dynamic mechanism is compatible with the observed polar growth of the SM crystal trace on the (100) surface of the sample and the range of its visually observed growth.</p>","PeriodicalId":770,"journal":{"name":"Russian Physics Journal","volume":"67 7","pages":"946 - 950"},"PeriodicalIF":0.4000,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dynamic Growth Mechanism of Crystal Faces of Surface Martensite with Habit Planes in Proximity to {112}\",\"authors\":\"N. M. Kashchenko\",\"doi\":\"10.1007/s11182-024-03201-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The second formation stage of a surface martensite (SM) crystal is associated with a layer-by-layer extension of its faces. A dynamic pattern of every layer formation is similar to a rapid crystal growth in the first stage. The role of dislocation nucleation centers belongs to the dislocations framing the crystal-face surfaces. By the example of the (10-1) face it is shown that the proposed dynamic mechanism is compatible with the observed polar growth of the SM crystal trace on the (100) surface of the sample and the range of its visually observed growth.</p>\",\"PeriodicalId\":770,\"journal\":{\"name\":\"Russian Physics Journal\",\"volume\":\"67 7\",\"pages\":\"946 - 950\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2024-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Russian Physics Journal\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11182-024-03201-5\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Physics Journal","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11182-024-03201-5","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
表面马氏体(SM)晶体的第二形成阶段与晶体面的逐层扩展有关。每层形成的动态模式与第一阶段的快速晶体生长相似。位错成核中心的作用属于构架晶面的位错。以(10-1)面为例,证明了所提出的动态机制与在样品(100)面上观察到的 SM 晶体极性生长轨迹及其肉眼观察到的生长范围是一致的。
Dynamic Growth Mechanism of Crystal Faces of Surface Martensite with Habit Planes in Proximity to {112}
The second formation stage of a surface martensite (SM) crystal is associated with a layer-by-layer extension of its faces. A dynamic pattern of every layer formation is similar to a rapid crystal growth in the first stage. The role of dislocation nucleation centers belongs to the dislocations framing the crystal-face surfaces. By the example of the (10-1) face it is shown that the proposed dynamic mechanism is compatible with the observed polar growth of the SM crystal trace on the (100) surface of the sample and the range of its visually observed growth.
期刊介绍:
Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.