{"title":"利用电曲线相关系数监测法设计的 1 × 4 纳米像素功率分配器","authors":"Yuzhuang Xie, Haisong Jiang and Kiichi Hamamoto","doi":"10.35848/1347-4065/ad50e5","DOIUrl":null,"url":null,"abstract":"The power splitter is one of the fundamental elements in a photonic IC. Among various power splitter structures, nano-pixel-based ones have attracted attention in recent years because of their flexible design capability. As there is no rigid design rule in nano-pixel layout, typically, inverse design algorithms are employed to realize the target function. In inverse design, general criteria are needed during the design process, and one typical criterion is the excess loss, however, there are no specific criteria for mode field evaluation. When designing a 1 × N power splitter, considering the power balance among the N output ports is crucial, therefore, we propose a correlation coefficient method to evaluate the output electric field profile. In this study, we adopted vector criteria including both an excess loss and correlation coefficient method during the inverse design process. As a result, the simulated results show all four 0th order modes and the output power to be 24.490%, 24.494%, 24.494%, and 24.490% with a low excess loss of 0.1 dB.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1 × 4 nano-pixel power splitter designed using an electric profile correlation coefficient monitor method\",\"authors\":\"Yuzhuang Xie, Haisong Jiang and Kiichi Hamamoto\",\"doi\":\"10.35848/1347-4065/ad50e5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The power splitter is one of the fundamental elements in a photonic IC. Among various power splitter structures, nano-pixel-based ones have attracted attention in recent years because of their flexible design capability. As there is no rigid design rule in nano-pixel layout, typically, inverse design algorithms are employed to realize the target function. In inverse design, general criteria are needed during the design process, and one typical criterion is the excess loss, however, there are no specific criteria for mode field evaluation. When designing a 1 × N power splitter, considering the power balance among the N output ports is crucial, therefore, we propose a correlation coefficient method to evaluate the output electric field profile. In this study, we adopted vector criteria including both an excess loss and correlation coefficient method during the inverse design process. As a result, the simulated results show all four 0th order modes and the output power to be 24.490%, 24.494%, 24.494%, and 24.490% with a low excess loss of 0.1 dB.\",\"PeriodicalId\":14741,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad50e5\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad50e5","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
摘要
功率分配器是光子集成电路的基本元件之一。在各种功率分配器结构中,基于纳米像素的结构因其灵活的设计能力近年来备受关注。由于纳米像素布局没有严格的设计规则,因此通常采用逆向设计算法来实现目标功能。在逆向设计中,设计过程需要一般标准,其中一个典型的标准是过量损耗,但没有具体的模式场评估标准。在设计 1 × N 功率分配器时,考虑 N 个输出端口之间的功率平衡至关重要,因此我们提出了一种相关系数方法来评估输出电场轮廓。在本研究中,我们在逆向设计过程中采用了包括过量损耗和相关系数方法在内的矢量标准。结果,模拟结果显示所有四个 0 阶模式和输出功率分别为 24.490%、24.494%、24.494% 和 24.490%,过量损耗低至 0.1 dB。
1 × 4 nano-pixel power splitter designed using an electric profile correlation coefficient monitor method
The power splitter is one of the fundamental elements in a photonic IC. Among various power splitter structures, nano-pixel-based ones have attracted attention in recent years because of their flexible design capability. As there is no rigid design rule in nano-pixel layout, typically, inverse design algorithms are employed to realize the target function. In inverse design, general criteria are needed during the design process, and one typical criterion is the excess loss, however, there are no specific criteria for mode field evaluation. When designing a 1 × N power splitter, considering the power balance among the N output ports is crucial, therefore, we propose a correlation coefficient method to evaluate the output electric field profile. In this study, we adopted vector criteria including both an excess loss and correlation coefficient method during the inverse design process. As a result, the simulated results show all four 0th order modes and the output power to be 24.490%, 24.494%, 24.494%, and 24.490% with a low excess loss of 0.1 dB.
期刊介绍:
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS