{"title":"用于实时片上通信的太阳盲光子集成芯片","authors":"Rui He, Yijian Song, Naixin Liu, Renfeng Chen, Jin Wu, Yufeng Wang, Qiang Hu, Xiongbin Chen, Junxi Wang, Jinmin Li, Tongbo Wei","doi":"10.1063/5.0206657","DOIUrl":null,"url":null,"abstract":"The monolithically integrated self-driven photoelectric detector (PD) with the light-emitting diode (LED) epitaxial structure completely relies on the built-in electric field in the multi-quantum wells region to separate the photogenerated carriers. Here, we propose a novel superlattices–electron barrier layer structure to expand the potential field region and enhance the detection capability of the integrated PD. The PD exhibits a record-breaking photo-to-dark current ratio of 5.14 × 107, responsivity of 110.3 A/W, and specific detectivity of 2.2 × 1013 Jones at 0 V bias, respectively. A clear open-eyed diagram of the monolithically integrated chip, including the PD, LED, and waveguide, is realized under a high-speed communication rate of 150 Mbps. The obtained transient response (rise/decay) time of 2.16/2.28 ns also illustrates the outstanding transient response capability of the integrated chip. The on-chip optical communication system is built to achieve the practical video signals transmission application, which is a formidable contender for the core module of future large-scale photonic integrated circuits.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"129 1","pages":""},"PeriodicalIF":5.4000,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Solar-blind photonic integrated chips for real-time on-chip communication\",\"authors\":\"Rui He, Yijian Song, Naixin Liu, Renfeng Chen, Jin Wu, Yufeng Wang, Qiang Hu, Xiongbin Chen, Junxi Wang, Jinmin Li, Tongbo Wei\",\"doi\":\"10.1063/5.0206657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The monolithically integrated self-driven photoelectric detector (PD) with the light-emitting diode (LED) epitaxial structure completely relies on the built-in electric field in the multi-quantum wells region to separate the photogenerated carriers. Here, we propose a novel superlattices–electron barrier layer structure to expand the potential field region and enhance the detection capability of the integrated PD. The PD exhibits a record-breaking photo-to-dark current ratio of 5.14 × 107, responsivity of 110.3 A/W, and specific detectivity of 2.2 × 1013 Jones at 0 V bias, respectively. A clear open-eyed diagram of the monolithically integrated chip, including the PD, LED, and waveguide, is realized under a high-speed communication rate of 150 Mbps. The obtained transient response (rise/decay) time of 2.16/2.28 ns also illustrates the outstanding transient response capability of the integrated chip. The on-chip optical communication system is built to achieve the practical video signals transmission application, which is a formidable contender for the core module of future large-scale photonic integrated circuits.\",\"PeriodicalId\":8198,\"journal\":{\"name\":\"APL Photonics\",\"volume\":\"129 1\",\"pages\":\"\"},\"PeriodicalIF\":5.4000,\"publicationDate\":\"2024-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APL Photonics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0206657\",\"RegionNum\":1,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APL Photonics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0206657","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
Solar-blind photonic integrated chips for real-time on-chip communication
The monolithically integrated self-driven photoelectric detector (PD) with the light-emitting diode (LED) epitaxial structure completely relies on the built-in electric field in the multi-quantum wells region to separate the photogenerated carriers. Here, we propose a novel superlattices–electron barrier layer structure to expand the potential field region and enhance the detection capability of the integrated PD. The PD exhibits a record-breaking photo-to-dark current ratio of 5.14 × 107, responsivity of 110.3 A/W, and specific detectivity of 2.2 × 1013 Jones at 0 V bias, respectively. A clear open-eyed diagram of the monolithically integrated chip, including the PD, LED, and waveguide, is realized under a high-speed communication rate of 150 Mbps. The obtained transient response (rise/decay) time of 2.16/2.28 ns also illustrates the outstanding transient response capability of the integrated chip. The on-chip optical communication system is built to achieve the practical video signals transmission application, which is a formidable contender for the core module of future large-scale photonic integrated circuits.
APL PhotonicsPhysics and Astronomy-Atomic and Molecular Physics, and Optics
CiteScore
10.30
自引率
3.60%
发文量
107
审稿时长
19 weeks
期刊介绍:
APL Photonics is the new dedicated home for open access multidisciplinary research from and for the photonics community. The journal publishes fundamental and applied results that significantly advance the knowledge in photonics across physics, chemistry, biology and materials science.