{"title":"压力驱动的金属化使二维 EuSbTe3 的结构和光电特性发生显著变化","authors":"Zhi-Kai Zhu, Zhong-Yang Li, Zhen Qin, Yi-Ming Wang, Dong Wang, Xiao-Hui Zeng, Fu-Yang Liu, Hong-Liang Dong, Qing-Yang Hu, Ling-Ping Kong, Hao-Zhe Liu, Wen-Ge Yang, Yan-Feng Guo, Shuai Yan, Xuan Fang, Wei He, Gang Liu","doi":"10.1007/s12598-024-02812-8","DOIUrl":null,"url":null,"abstract":"<p>Two-dimensional materials are widely considered to be highly promising for the development of photodetectors. To improve the performance of these devices, researchers often employ techniques such as defect engineering. Herein, pressure is employed as a clean and novel means to manipulate the structural and physical properties of EuSbTe<sub>3</sub>, an emerging two-dimensional semiconductor. The experimental results demonstrate that the structural phase transformation of EuSbTe<sub>3</sub> occurs under pressure, with an increase in infrared reflectivity, a band gap closure, and a metallization at pressures. Combined with X-ray diffraction (XRD) and Raman characterizations, it is evident that the pressure-driven transition from semiconductor <i>Pmmn</i> phase to metallic <i>Cmcm</i> phase causes the disappearance of the charge density wave. Furthermore, at a mild pressure, approximately 2 GPa, the maximum photocurrent of EuSbTe<sub>3</sub> is three times higher than that at ambient condition, suggesting an untapped potential for various practical applications.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>","PeriodicalId":749,"journal":{"name":"Rare Metals","volume":null,"pages":null},"PeriodicalIF":9.6000,"publicationDate":"2024-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pressure-driven metallization with significant changes of structural and photoelectric properties in two-dimensional EuSbTe3\",\"authors\":\"Zhi-Kai Zhu, Zhong-Yang Li, Zhen Qin, Yi-Ming Wang, Dong Wang, Xiao-Hui Zeng, Fu-Yang Liu, Hong-Liang Dong, Qing-Yang Hu, Ling-Ping Kong, Hao-Zhe Liu, Wen-Ge Yang, Yan-Feng Guo, Shuai Yan, Xuan Fang, Wei He, Gang Liu\",\"doi\":\"10.1007/s12598-024-02812-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Two-dimensional materials are widely considered to be highly promising for the development of photodetectors. To improve the performance of these devices, researchers often employ techniques such as defect engineering. Herein, pressure is employed as a clean and novel means to manipulate the structural and physical properties of EuSbTe<sub>3</sub>, an emerging two-dimensional semiconductor. The experimental results demonstrate that the structural phase transformation of EuSbTe<sub>3</sub> occurs under pressure, with an increase in infrared reflectivity, a band gap closure, and a metallization at pressures. Combined with X-ray diffraction (XRD) and Raman characterizations, it is evident that the pressure-driven transition from semiconductor <i>Pmmn</i> phase to metallic <i>Cmcm</i> phase causes the disappearance of the charge density wave. Furthermore, at a mild pressure, approximately 2 GPa, the maximum photocurrent of EuSbTe<sub>3</sub> is three times higher than that at ambient condition, suggesting an untapped potential for various practical applications.</p><h3 data-test=\\\"abstract-sub-heading\\\">Graphical abstract</h3>\",\"PeriodicalId\":749,\"journal\":{\"name\":\"Rare Metals\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":9.6000,\"publicationDate\":\"2024-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Rare Metals\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1007/s12598-024-02812-8\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rare Metals","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s12598-024-02812-8","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Pressure-driven metallization with significant changes of structural and photoelectric properties in two-dimensional EuSbTe3
Two-dimensional materials are widely considered to be highly promising for the development of photodetectors. To improve the performance of these devices, researchers often employ techniques such as defect engineering. Herein, pressure is employed as a clean and novel means to manipulate the structural and physical properties of EuSbTe3, an emerging two-dimensional semiconductor. The experimental results demonstrate that the structural phase transformation of EuSbTe3 occurs under pressure, with an increase in infrared reflectivity, a band gap closure, and a metallization at pressures. Combined with X-ray diffraction (XRD) and Raman characterizations, it is evident that the pressure-driven transition from semiconductor Pmmn phase to metallic Cmcm phase causes the disappearance of the charge density wave. Furthermore, at a mild pressure, approximately 2 GPa, the maximum photocurrent of EuSbTe3 is three times higher than that at ambient condition, suggesting an untapped potential for various practical applications.
期刊介绍:
Rare Metals is a monthly peer-reviewed journal published by the Nonferrous Metals Society of China. It serves as a platform for engineers and scientists to communicate and disseminate original research articles in the field of rare metals. The journal focuses on a wide range of topics including metallurgy, processing, and determination of rare metals. Additionally, it showcases the application of rare metals in advanced materials such as superconductors, semiconductors, composites, and ceramics.