钽在变形和随后退火过程中的微观结构演变

Donald W. Brown, Veronica Anghel, Bjorn Clausen, Reeju Pokharel, Daniel J. Savage, Sven C. Vogel
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引用次数: 0

摘要

要根据工艺知识预测材料的行为,或推断材料在实验室中不易再现的环境条件(如核反应堆环境)下的机械性能,就必须使用微观结构感知模型。Ta 元素提供了一个相对简单的 BCC 系统,在该系统中可以对变形过程的微观结构进行了解,然后将其应用于更复杂的 BCC 合金。在压缩变形和随后的热处理过程中,原位中子衍射被用来监测 Ta 在整个模拟加工步骤中微观结构特征的演变。晶体纹理和位错密度的测定首先是塑性应变的函数,然后是温度的函数。晶格应变被确定并归因于宏观、晶粒和位错长度尺度上的应力。通过衍射线轮廓的变化,可监测位错密度在变形过程中的增加以及随后在热处理过程中的恢复。此外,纹理的随机化也是再结晶的标志。在本文研究的范围内,差排通过湮灭恢复与初始差排密度无关。相反,再结晶则与初始位错密度密切相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Microstructural Evolution of Tantalum During Deformation and Subsequent Annealing

Microstructural Evolution of Tantalum During Deformation and Subsequent Annealing

Microstructure-aware models are necessary to predict the behavior of material based on process knowledge or to extrapolate mechanical properties of materials to environmental conditions which are not easily reproduced in the laboratory, e.g., nuclear reactor environments. Elemental Ta provides a relatively simple BCC system in which to develop a microstructural understanding of deformation processes which can then be applied to more complicated BCC alloys. In situ neutron diffraction during compressive deformation and subsequent heat treatment have been used to monitor the evolution of microstructural features in Ta throughout simulated processing steps. Crystallographic texture and dislocation density are determined as a function of first plastic strain, then temperature. Lattice strains are determined and attributed to stresses at macroscopic, grain and dislocation length scales. The increase of the dislocation density through deformation and subsequent recovery during heat treatment is monitored through the changing diffraction line profile. Also, randomization of the texture is used as a signature of recrystallization. The recovery of dislocations through annihilation is not observed to depend on the initial dislocation density in the range studied here. In contrast, recrystallization is observed to depend strongly on the initially dislocation density.

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