A low voltage high performance CNTFET-based VDIBA and universal filter application

With the reduction of CMOS technology to nanometric dimensions, it is thought that the end of atomic limits in integrated circuit applications is almost approached and some problems are encountered in production. Carbon nanotube field effect transistors (CNTFETs) are considered a proper option to replace CMOS near term owing to their superior properties such as scalability and better channel electrostatics. For this purpose, a low-voltage, low-power Voltage Differencing Inverting Buffered Amplifier (VDIBA) structure is propose with a 32 nm CNTFET, in this article. The proposed CNTFET VDIBA structure operates with a bias current of 1 µA and consumes 14.32 µW of power with a supply voltage of ± 0.3 V. Compared to the traditional CMOS VDIBA structure, the power consumption is reduced by 733 times. Besides, proposed VDIBA structure has a bandwidth of 43.788 GHz.