具有屏蔽效应的 ZnMgO/ZnO 异质结构的迁移特性

IF 0.9 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Physics of the Solid State Pub Date : 2024-06-24 DOI:10.1134/S1063783423600061

Z. Yarar, M. D. Alyörük, H. C. Çekil, B. Özdemir, M. Özdemir

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引用次数: 0

摘要

摘要采用集合蒙特卡罗方法系统地研究了氧化锌/氧化镁异质结构的电子迁移率特性。所有的电子散射机制都包含了屏蔽效应。计算了温度范围为 4 至 300 K、镁含量为 8.5% 至 44% 的迁移率。在这一范围内，位错散射（DS）和界面粗糙度散射（IFR）对低镁含量和高镁含量分别非常有效。散射机制中必须考虑屏蔽效应，才能与现有实验结果达成合理一致。我们的发现对氧化锌基器件的设计和优化具有重要意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Mobility Characteristics of ZnMgO/ZnO Heterostructures with Screening Effects

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Mobility Characteristics of ZnMgO/ZnO Heterostructures with Screening Effects

The electron mobility characteristics of a ZnMgO/ZnO heterostructure are systematically investigated by an ensemble Monte Carlo method. Screening effects are included in all electron scattering mechanisms. The mobilities are calculated for a temperature range of 4 to 300 K and Mg contents ranging from 8.5 to 44%. In this range, dislocation scattering (DS) and interface roughness scattering (IFR) are highly effective for low and high values of Mg compositions, respectively. Screening effects must be considered in scattering mechanisms to achieve a reasonable agreement with existing experimental results. Our findings could be significant for the design and optimization of ZnO-based devices.

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来源期刊

Physics of the Solid State 物理-物理：凝聚态物理

CiteScore

1.70

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.