用于光电应用的范德华外延 II 型带排列 CsPbI3/TMDC 异质结构

IF 6.5 2区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY
Chang Lu, Shunhui Zhang, Meili Chen, Haitao Chen, Mengjian Zhu, Zhengwei Zhang, Jun He, Lin Zhang, Xiaoming Yuan
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引用次数: 0

摘要

范德华外延可以在不考虑晶格匹配要求的情况下形成异质结构,因此是形成二维/二维和二维/三维异质结的一种很有前途的方法。考虑到 CsPbI3 和过渡金属二卤化物(TMDCs)独特的光学特性,它们的异质结构在光子学和光电子学领域都具有潜在的应用前景。在这里,我们展示了在单层 WSe2 上选择性生长厚度为 4.0 nm 的立方相 CsPbI3 纳米薄膜和人字形/臂向纳米线 (NW)。此外,我们还展示了 CsPbI3 在铜栅转印 WSe2 和基于 WSe2 的光电器件上的生长情况,为结构分析和器件性能改进提供了一个平台。透射电子显微镜(TEM)结果显示了立方 CsPbI3 相的外延性质。所揭示的 CsPbI3 生长基本原理对其他二维衬底也普遍适用,这为制造基于 CsPbI3 的范德华异质结构(vdWHs)提供了巨大优势。X 射线光电子能谱(XPS)和光学表征证实了 II 型带排列,从而产生了快速的电荷转移过程和较低能量的宽发射峰。WSe2/CsPbI3 异质结构的形成在很大程度上将光电流从 2.38 nA 提高到 38.59 nA。这些发现对于在原子薄二维衬底上自下而上地外延无机半导体以实现光电应用至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications

Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications

Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement, thus is a promising method to form 2D/2D and 2D/3D heterojunction. Considering the unique optical properties of CsPbI3 and transition metal dichalcogenides (TMDCs), their heterostructure presents potential applications in both photonics and optoelectronics fields. Here, we demonstrate selective growth of cubic phase CsPbI3 nanofilm with thickness as thin as 4.0 nm and zigzag/armchair oriented nanowires (NWs) on monolayer WSe2. Furthermore, we show growth of CsPbI3 on both transferred WSe2 on copper grid and WSe2–based optoelectrical devices, providing a platform for structure analysis and device performance modification. Transmission electron microscopy (TEM) results reveal the epitaxial nature of cubic CsPbI3 phase. The revealed growth fundamental of CsPbI3 is universal valid for other two-dimensional substrates, offering a great advantage to fabricate CsPbI3 based van der Waals heterostructures (vdWHs). X-ray photoelectron spectroscopy (XPS) and optical characterization confirm the type-II band alignment, resulting in a fast charge transfer process and the occurrence of a broad emission peak at lower energy. The formation of WSe2/CsPbI3 heterostructure largely enhances the photocurrent from 2.38 nA to 38.59 nA. These findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.

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来源期刊
Frontiers of Physics
Frontiers of Physics PHYSICS, MULTIDISCIPLINARY-
CiteScore
9.20
自引率
9.30%
发文量
898
审稿时长
6-12 weeks
期刊介绍: Frontiers of Physics is an international peer-reviewed journal dedicated to showcasing the latest advancements and significant progress in various research areas within the field of physics. The journal's scope is broad, covering a range of topics that include: Quantum computation and quantum information Atomic, molecular, and optical physics Condensed matter physics, material sciences, and interdisciplinary research Particle, nuclear physics, astrophysics, and cosmology The journal's mission is to highlight frontier achievements, hot topics, and cross-disciplinary points in physics, facilitating communication and idea exchange among physicists both in China and internationally. It serves as a platform for researchers to share their findings and insights, fostering collaboration and innovation across different areas of physics.
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