双层和单层石墨烯的能量损失张量：多体效应的作用

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-06-26 DOI:10.1007/s10825-024-02182-5

E. Rostampour

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引用次数: 0

摘要

双层和单层石墨烯的能量损失张量是根据 Su 等人的模型（Phys Rev Lett 42: 1698 1979）计算得出的。纳米级碳系统的尺寸和几何形状对其光学特性起着重要作用。双层石墨烯和单层石墨烯在 2.81-8.0 eV 区域的吸收带显示出每个吸收带的尖锐结构。这些波段的分子结构是局部的，其结晶顺序是长程的。在电场的 x 方向上，双层和单层石墨烯的介电张量和能量损失张量最大。讨论了这些结果对金刚石、富勒烯、石墨和石墨烯的重要性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

The energy-loss tensor in the bilayer and monolayer graphene: the role of many-body effects

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The energy-loss tensor in the bilayer and monolayer graphene: the role of many-body effects

The energy-loss tensor of bilayer and monolayer graphene is calculated according to the model expressed in Su et al. (Phys Rev Lett 42: 1698 1979). The size and geometry of the nanoscale carbon systems play an important role in their optical properties. Absorption bands of bilayer and monolayer graphene in the 2.81–8.0 eV region indicate sharp structures in each band. The molecular structure of these bands is localized and their crystalline order is long-range. In the x-direction of the electric field, the dielectric tensor and the energy-loss tensor of bilayer and monolayer graphene have the maximum amount. The importance of results for diamond, fullerene, graphite, and graphene is discussed.

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.