Mario Garcia-Lechuga, Noemi Casquero, Jan Siegel, Javier Solis, Raphael Clady, Andong Wang, Olivier Utéza, David Grojo
{"title":"使用超快激光对晶体硅进行非晶化和烧蚀:脉冲持续时间和照射波长的相关性","authors":"Mario Garcia-Lechuga, Noemi Casquero, Jan Siegel, Javier Solis, Raphael Clady, Andong Wang, Olivier Utéza, David Grojo","doi":"10.1002/lpor.202301327","DOIUrl":null,"url":null,"abstract":"Using lasers to achieve controlled crystallographic phase changes in silicon with high spatial precision promises new manufacturing solutions in semiconductor technologies, including silicon photonics. Recent demonstrations of improved amorphization thicknesses position ultrafast lasers as an optimum tool to meet current challenges. Here, the literature on silicon transformations is reviewed and complemented with new experimental data. This includes amorphization and ablation response as a function of pulse duration (<i>τ =</i> 13.9 to 134 fs at <i>λ =</i> 800 nm) and laser wavelength (<i>λ =</i> 258 to 4000 nm with <i>τ =</i> 200 fs pulses). For pulse duration-dependent studies on Si(111), the amorphization fluence threshold decreases with shorter durations, emphasizing the significance of non-linear absorption in the range of considered conditions. For wavelength-dependent studies, the amorphization threshold increases sharply from <i>λ =</i> 258 to 1030 nm, followed by near-constant behavior up to <i>λ =</i> 3000 nm. Conversely, the ablation threshold fluence increases in these specified ranges. Differences in the obtained amorphization thicknesses on Si(111) and Si(100) are also discussed, identifying an anomalously large fluence range for amorphization at <i>λ =</i> 258 nm. Finally, the question of the lateral resolution, shown as independent of the interaction nonlinearity is addressed.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":9.8000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Amorphization and Ablation of Crystalline Silicon Using Ultrafast Lasers: Dependencies on the Pulse Duration and Irradiation Wavelength\",\"authors\":\"Mario Garcia-Lechuga, Noemi Casquero, Jan Siegel, Javier Solis, Raphael Clady, Andong Wang, Olivier Utéza, David Grojo\",\"doi\":\"10.1002/lpor.202301327\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using lasers to achieve controlled crystallographic phase changes in silicon with high spatial precision promises new manufacturing solutions in semiconductor technologies, including silicon photonics. Recent demonstrations of improved amorphization thicknesses position ultrafast lasers as an optimum tool to meet current challenges. Here, the literature on silicon transformations is reviewed and complemented with new experimental data. This includes amorphization and ablation response as a function of pulse duration (<i>τ =</i> 13.9 to 134 fs at <i>λ =</i> 800 nm) and laser wavelength (<i>λ =</i> 258 to 4000 nm with <i>τ =</i> 200 fs pulses). For pulse duration-dependent studies on Si(111), the amorphization fluence threshold decreases with shorter durations, emphasizing the significance of non-linear absorption in the range of considered conditions. For wavelength-dependent studies, the amorphization threshold increases sharply from <i>λ =</i> 258 to 1030 nm, followed by near-constant behavior up to <i>λ =</i> 3000 nm. Conversely, the ablation threshold fluence increases in these specified ranges. Differences in the obtained amorphization thicknesses on Si(111) and Si(100) are also discussed, identifying an anomalously large fluence range for amorphization at <i>λ =</i> 258 nm. Finally, the question of the lateral resolution, shown as independent of the interaction nonlinearity is addressed.\",\"PeriodicalId\":204,\"journal\":{\"name\":\"Laser & Photonics Reviews\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":9.8000,\"publicationDate\":\"2024-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Laser & Photonics Reviews\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1002/lpor.202301327\",\"RegionNum\":1,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Laser & Photonics Reviews","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/lpor.202301327","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
Amorphization and Ablation of Crystalline Silicon Using Ultrafast Lasers: Dependencies on the Pulse Duration and Irradiation Wavelength
Using lasers to achieve controlled crystallographic phase changes in silicon with high spatial precision promises new manufacturing solutions in semiconductor technologies, including silicon photonics. Recent demonstrations of improved amorphization thicknesses position ultrafast lasers as an optimum tool to meet current challenges. Here, the literature on silicon transformations is reviewed and complemented with new experimental data. This includes amorphization and ablation response as a function of pulse duration (τ = 13.9 to 134 fs at λ = 800 nm) and laser wavelength (λ = 258 to 4000 nm with τ = 200 fs pulses). For pulse duration-dependent studies on Si(111), the amorphization fluence threshold decreases with shorter durations, emphasizing the significance of non-linear absorption in the range of considered conditions. For wavelength-dependent studies, the amorphization threshold increases sharply from λ = 258 to 1030 nm, followed by near-constant behavior up to λ = 3000 nm. Conversely, the ablation threshold fluence increases in these specified ranges. Differences in the obtained amorphization thicknesses on Si(111) and Si(100) are also discussed, identifying an anomalously large fluence range for amorphization at λ = 258 nm. Finally, the question of the lateral resolution, shown as independent of the interaction nonlinearity is addressed.
期刊介绍:
Laser & Photonics Reviews is a reputable journal that publishes high-quality Reviews, original Research Articles, and Perspectives in the field of photonics and optics. It covers both theoretical and experimental aspects, including recent groundbreaking research, specific advancements, and innovative applications.
As evidence of its impact and recognition, Laser & Photonics Reviews boasts a remarkable 2022 Impact Factor of 11.0, according to the Journal Citation Reports from Clarivate Analytics (2023). Moreover, it holds impressive rankings in the InCites Journal Citation Reports: in 2021, it was ranked 6th out of 101 in the field of Optics, 15th out of 161 in Applied Physics, and 12th out of 69 in Condensed Matter Physics.
The journal uses the ISSN numbers 1863-8880 for print and 1863-8899 for online publications.