{"title":"利用低功耗活金属带和漏极低 K 材料降低垂直隧道场效应晶体管的次阈值波动。","authors":"Kalai Selvi Kanagarajan, Dhanalakshmi Krishnan Sadhasivan","doi":"10.3762/bjnano.15.59","DOIUrl":null,"url":null,"abstract":"<p><p>In this research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail. Low-<i>k</i> SiO<sub>2</sub> is incorporated in the channel-drain region. A live molybdenum metal strip with low work function is placed in a high-<i>k</i> HfO<sub>2</sub> layer in the source-channel region. The device is examined by the parameters <i>I</i> <sub>off</sub>, subthreshold swing, threshold voltage, and <i>I</i> <sub>on</sub>/<i>I</i> <sub>off</sub> ratio. The introduction of a live metal strip in the dielectric layer closer to the source-channel interface results in a minimum subthreshold slope and a good <i>I</i> <sub>on</sub>/<i>I</i> <sub>off</sub> ratio. The low-<i>k</i> material at the drain reduces the gate-to-drain capacitance. Both the SiO<sub>2</sub> layer and the live metal strip show excellent leakage current reduction to 1.4 × 10<sup>-17</sup> A/μm. The design provides a subthreshold swing of 5 mV/decade, which is an excellent improvement in TFETs, an on-current of 1.00 × 10<sup>-5</sup> A/μm, an <i>I</i> <sub>on</sub>/<i>I</i> <sub>off</sub> ratio of 7.14 × 10<sup>11</sup>, and a threshold voltage of 0.28 V.</p>","PeriodicalId":8802,"journal":{"name":"Beilstein Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11196947/pdf/","citationCount":"0","resultStr":"{\"title\":\"Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-<i>k</i> material at the drain.\",\"authors\":\"Kalai Selvi Kanagarajan, Dhanalakshmi Krishnan Sadhasivan\",\"doi\":\"10.3762/bjnano.15.59\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>In this research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail. Low-<i>k</i> SiO<sub>2</sub> is incorporated in the channel-drain region. A live molybdenum metal strip with low work function is placed in a high-<i>k</i> HfO<sub>2</sub> layer in the source-channel region. The device is examined by the parameters <i>I</i> <sub>off</sub>, subthreshold swing, threshold voltage, and <i>I</i> <sub>on</sub>/<i>I</i> <sub>off</sub> ratio. The introduction of a live metal strip in the dielectric layer closer to the source-channel interface results in a minimum subthreshold slope and a good <i>I</i> <sub>on</sub>/<i>I</i> <sub>off</sub> ratio. The low-<i>k</i> material at the drain reduces the gate-to-drain capacitance. Both the SiO<sub>2</sub> layer and the live metal strip show excellent leakage current reduction to 1.4 × 10<sup>-17</sup> A/μm. The design provides a subthreshold swing of 5 mV/decade, which is an excellent improvement in TFETs, an on-current of 1.00 × 10<sup>-5</sup> A/μm, an <i>I</i> <sub>on</sub>/<i>I</i> <sub>off</sub> ratio of 7.14 × 10<sup>11</sup>, and a threshold voltage of 0.28 V.</p>\",\"PeriodicalId\":8802,\"journal\":{\"name\":\"Beilstein Journal of Nanotechnology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2024-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11196947/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Beilstein Journal of Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.3762/bjnano.15.59\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2024/1/1 0:00:00\",\"PubModel\":\"eCollection\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Beilstein Journal of Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3762/bjnano.15.59","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/1/1 0:00:00","PubModel":"eCollection","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
本文设计了一种包含活金属带和低介电常数材料的垂直隧道场效应晶体管(TFET)结构,并对其性能指标进行了详细分析。在沟道-漏极区域加入了低介电常数的二氧化硅。在源沟道区的高 k HfO2 层中放置了具有低功函数的活钼金属带。通过 I off、阈下摆动、阈值电压和 I on/I off 比等参数对该器件进行了检验。在更靠近源极-沟道界面的介电层中引入活金属带,可实现最小的亚阈值斜率和良好的 I on/I off 比。漏极的低 k 材料降低了栅极到漏极的电容。二氧化硅层和活金属带都显示出出色的漏电流降低效果,达到 1.4 × 10-17 A/μm。该设计的阈下摆幅为 5 mV/decade,是对 TFET 的出色改进,导通电流为 1.00 × 10-5 A/μm,I on/I off 比为 7.14 × 1011,阈值电压为 0.28 V。
Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain.
In this research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail. Low-k SiO2 is incorporated in the channel-drain region. A live molybdenum metal strip with low work function is placed in a high-k HfO2 layer in the source-channel region. The device is examined by the parameters Ioff, subthreshold swing, threshold voltage, and Ion/Ioff ratio. The introduction of a live metal strip in the dielectric layer closer to the source-channel interface results in a minimum subthreshold slope and a good Ion/Ioff ratio. The low-k material at the drain reduces the gate-to-drain capacitance. Both the SiO2 layer and the live metal strip show excellent leakage current reduction to 1.4 × 10-17 A/μm. The design provides a subthreshold swing of 5 mV/decade, which is an excellent improvement in TFETs, an on-current of 1.00 × 10-5 A/μm, an Ion/Ioff ratio of 7.14 × 1011, and a threshold voltage of 0.28 V.
期刊介绍:
The Beilstein Journal of Nanotechnology is an international, peer-reviewed, Open Access journal. It provides a unique platform for rapid publication without any charges (free for author and reader) – Platinum Open Access. The content is freely accessible 365 days a year to any user worldwide. Articles are available online immediately upon publication and are publicly archived in all major repositories. In addition, it provides a platform for publishing thematic issues (theme-based collections of articles) on topical issues in nanoscience and nanotechnology.
The journal is published and completely funded by the Beilstein-Institut, a non-profit foundation located in Frankfurt am Main, Germany. The editor-in-chief is Professor Thomas Schimmel – Karlsruhe Institute of Technology. He is supported by more than 20 associate editors who are responsible for a particular subject area within the scope of the journal.