逐层进行三维集成

IF 33.7 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Matthew Parker
{"title":"逐层进行三维集成","authors":"Matthew Parker","doi":"10.1038/s41928-024-01204-1","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7000,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"3D integration proceeds tier-by-tier\",\"authors\":\"Matthew Parker\",\"doi\":\"10.1038/s41928-024-01204-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":19064,\"journal\":{\"name\":\"Nature Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":33.7000,\"publicationDate\":\"2024-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.nature.com/articles/s41928-024-01204-1\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Electronics","FirstCategoryId":"5","ListUrlMain":"https://www.nature.com/articles/s41928-024-01204-1","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

湖南大学的刘元及其同事现在报告了一种用于二维材料单片三维集成的一步范德华集成法。在他们的方法中,电路层的所有元件都是在牺牲晶片上制造的。这包括化学气相沉积生长的 MoS2、漏极和栅极电极、栅极电介质(10 纳米厚的 Al2O3)、层间电介质和通孔。然后,将预制电路从牺牲晶片上取下,在 120 ℃ 的温度下机械地层压到目标二维表面上。研究人员演示了 2 英寸电路层的转移,最厚达 10 层的堆叠并未显示出底层 MoS2 晶体管性能的明显降低。电路层的对齐是通过使用透明的聚二甲基硅氧烷印章和光学显微镜实现的,对齐分辨率约为 0.5 μm。不过,Liu 及其同事认为,可以调整光刻技术中使用的类似对准工艺,以提高对准分辨率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

3D integration proceeds tier-by-tier

3D integration proceeds tier-by-tier
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来源期刊
Nature Electronics
Nature Electronics Engineering-Electrical and Electronic Engineering
CiteScore
47.50
自引率
2.30%
发文量
159
期刊介绍: Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research. The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society. Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting. In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.
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