n-Si/Au 可寻址光电化学传感器中光电电压的特征和理解。

IF 3.3 3区化学 Q2 CHEMISTRY, ANALYTICAL

Analyst Pub Date : 2024-06-19 DOI:10.1039/D4AN00768A

Armeen Hussain, Kayla Mancini, Yousef Khatib and Glen D. O'Neil

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引用次数: 0

摘要

我们发现，n-Si/Au 光电极显示的光电压与半导体/液体结一致，而不是埋入结，这与我们以前对这些传感器中光电压如何产生的理解相反。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors†

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Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors†

Here, we characterize the photovoltage of n-Si/Au light-addressable electrodes (LAEs) over a range of solution potentials from ca. −1 to +1 V. We find that the n-Si/Au photoelectrodes show photovoltages consistent with a semiconductor/liquid junction in contrast to a buried junction, which opposes our previous understanding of how photovoltage originates in these sensors.

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