W. G. Stam, M. Gaowei, E. Echeverria, Kenneth Evans-Lutterodt, Jean Jordan-Sweet, T. Juffmann, S. Karkare, J. Maxson, S. J. van der Molen, C. Pennington, P. Saha, J. Smedley, R. M. Tromp
{"title":"超平超薄碱锑化物光电阴极薄膜的生长","authors":"W. G. Stam, M. Gaowei, E. Echeverria, Kenneth Evans-Lutterodt, Jean Jordan-Sweet, T. Juffmann, S. Karkare, J. Maxson, S. J. van der Molen, C. Pennington, P. Saha, J. Smedley, R. M. Tromp","doi":"10.1063/5.0213461","DOIUrl":null,"url":null,"abstract":"Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb on graphene-coated 4H–SiC (Gr/4H–SiC), 3C–SiC, and Si3N4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs3Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (<30 nm). For the Si3N4 substrate, film growth is shown to be polycrystalline, while films grown on Gr/4H–SiC show a high degree of ordering with signs of epitaxy.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth of ultra-flat ultra-thin alkali antimonide photocathode films\",\"authors\":\"W. G. Stam, M. Gaowei, E. Echeverria, Kenneth Evans-Lutterodt, Jean Jordan-Sweet, T. Juffmann, S. Karkare, J. Maxson, S. J. van der Molen, C. Pennington, P. Saha, J. Smedley, R. M. Tromp\",\"doi\":\"10.1063/5.0213461\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb on graphene-coated 4H–SiC (Gr/4H–SiC), 3C–SiC, and Si3N4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs3Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (<30 nm). For the Si3N4 substrate, film growth is shown to be polycrystalline, while films grown on Gr/4H–SiC show a high degree of ordering with signs of epitaxy.\",\"PeriodicalId\":7985,\"journal\":{\"name\":\"APL Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APL Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0213461\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APL Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1063/5.0213461","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Growth of ultra-flat ultra-thin alkali antimonide photocathode films
Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb on graphene-coated 4H–SiC (Gr/4H–SiC), 3C–SiC, and Si3N4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs3Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (<30 nm). For the Si3N4 substrate, film growth is shown to be polycrystalline, while films grown on Gr/4H–SiC show a high degree of ordering with signs of epitaxy.
期刊介绍:
APL Materials features original, experimental research on significant topical issues within the field of materials science. In order to highlight research at the forefront of materials science, emphasis is given to the quality and timeliness of the work. The journal considers theory or calculation when the work is particularly timely and relevant to applications.
In addition to regular articles, the journal also publishes Special Topics, which report on cutting-edge areas in materials science, such as Perovskite Solar Cells, 2D Materials, and Beyond Lithium Ion Batteries.