Krishna Hari Sharma, Yao-Han Dong, Po-Hsien Chiang, Zih-Chun Su, Ching-Fuh Lin
{"title":"硅 (100) 表面钝化驱动的银膜结晶度调整及其对 Ag/n-Si 中红外肖特基光电探测器性能的影响","authors":"Krishna Hari Sharma, Yao-Han Dong, Po-Hsien Chiang, Zih-Chun Su, Ching-Fuh Lin","doi":"10.1063/5.0214341","DOIUrl":null,"url":null,"abstract":"The utilization of metal/semiconductor Schottky devices for plasmonic harvesting of hot carriers holds immense potential in the field of sub-bandgap photodetection. In this work, we explore a surface passivation scheme using air plasma exposure to modify the Si (100) surface and subsequently the crystal orientation of the deposited Ag film for photon detection in the mid-infrared (MIR) regime. This tailoring was achieved by varying the plasma exposure duration (0, 150, 300, 450, and 600 s). As a result, we could tune the crystal orientation of Ag from the (200) to the (210) crystal plane, with the Ag (111) orientation present in all devices. Furthermore, the photo-response behavior under MIR exposure at λ = 4.2 µm was studied both experimentally and using COMSOL simulations. It was observed that both photoelectric (PE) and photothermal (PT) effects contributed to the photo-response behavior of all devices. The Ag/Si device exposed to air plasma for 300 s exhibited the maximum PE-driven response (2.73 µA/W), while the device exposed to air plasma for 600 s showed a significant PT-driven response (13.01 µA/W). In addition, this strategy helped reduce the reverse leakage current by up to 99.5%. This study demonstrates that MIR detection at longer wavelengths can be optimized by tailoring the crystal orientation of the metal film.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"3 2","pages":""},"PeriodicalIF":8.3000,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Silicon (100) surface passivation-driven tuning of Ag film crystallinity and its impact on the performance of Ag/n-Si mid-infrared Schottky photodetector\",\"authors\":\"Krishna Hari Sharma, Yao-Han Dong, Po-Hsien Chiang, Zih-Chun Su, Ching-Fuh Lin\",\"doi\":\"10.1063/5.0214341\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The utilization of metal/semiconductor Schottky devices for plasmonic harvesting of hot carriers holds immense potential in the field of sub-bandgap photodetection. In this work, we explore a surface passivation scheme using air plasma exposure to modify the Si (100) surface and subsequently the crystal orientation of the deposited Ag film for photon detection in the mid-infrared (MIR) regime. This tailoring was achieved by varying the plasma exposure duration (0, 150, 300, 450, and 600 s). As a result, we could tune the crystal orientation of Ag from the (200) to the (210) crystal plane, with the Ag (111) orientation present in all devices. Furthermore, the photo-response behavior under MIR exposure at λ = 4.2 µm was studied both experimentally and using COMSOL simulations. It was observed that both photoelectric (PE) and photothermal (PT) effects contributed to the photo-response behavior of all devices. The Ag/Si device exposed to air plasma for 300 s exhibited the maximum PE-driven response (2.73 µA/W), while the device exposed to air plasma for 600 s showed a significant PT-driven response (13.01 µA/W). In addition, this strategy helped reduce the reverse leakage current by up to 99.5%. This study demonstrates that MIR detection at longer wavelengths can be optimized by tailoring the crystal orientation of the metal film.\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"3 2\",\"pages\":\"\"},\"PeriodicalIF\":8.3000,\"publicationDate\":\"2024-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0214341\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1063/5.0214341","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Silicon (100) surface passivation-driven tuning of Ag film crystallinity and its impact on the performance of Ag/n-Si mid-infrared Schottky photodetector
The utilization of metal/semiconductor Schottky devices for plasmonic harvesting of hot carriers holds immense potential in the field of sub-bandgap photodetection. In this work, we explore a surface passivation scheme using air plasma exposure to modify the Si (100) surface and subsequently the crystal orientation of the deposited Ag film for photon detection in the mid-infrared (MIR) regime. This tailoring was achieved by varying the plasma exposure duration (0, 150, 300, 450, and 600 s). As a result, we could tune the crystal orientation of Ag from the (200) to the (210) crystal plane, with the Ag (111) orientation present in all devices. Furthermore, the photo-response behavior under MIR exposure at λ = 4.2 µm was studied both experimentally and using COMSOL simulations. It was observed that both photoelectric (PE) and photothermal (PT) effects contributed to the photo-response behavior of all devices. The Ag/Si device exposed to air plasma for 300 s exhibited the maximum PE-driven response (2.73 µA/W), while the device exposed to air plasma for 600 s showed a significant PT-driven response (13.01 µA/W). In addition, this strategy helped reduce the reverse leakage current by up to 99.5%. This study demonstrates that MIR detection at longer wavelengths can be optimized by tailoring the crystal orientation of the metal film.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.