SYNTHESIS OF STRUCTURED ZINC SELENIDE FOR OPTOELECTRONIC APPLICATIONS

In this paper, synthesis of Zinc Selenide (ZnSe) based photovoltaic materials deposited by electrode position method. The material lms have been characterized for their optical properties using UV-VIS spectrophotometer with wavelength range of 300 nm – 900 nm and electrical conductivity using photoelectrochemical (PEC) cell measurement. The conductivity type of the electrodeposited materials was investigated together with the tuning of the optical phenomena. The materials deposited were obtained by varying deposition time from 5 minutes to 15 minutes for ZnSe. It was observed that the optical properties of the materials increased with an increase in the time of deposition. The optical band gap of ZnSe was found to be in the range between 2.03 and 2.46 eV. The PEC signal results revealed ZnSe as an n-type material.