蒸发源和基底之间的距离对真空热蒸发法形成碲化镉铅（PbTe）纳米结构的影响

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2024-06-06 DOI:10.15251/cl.2024.215.431

G. Amirbekova, Zh. K. Tolepov, N. Guseinova, M. A. Tulegenova, T. Kuanyshbekov

{"title":"蒸发源和基底之间的距离对真空热蒸发法形成碲化镉铅（PbTe）纳米结构的影响","authors":"G. Amirbekova, Zh. K. Tolepov, N. Guseinova, M. A. Tulegenova, T. Kuanyshbekov","doi":"10.15251/cl.2024.215.431","DOIUrl":null,"url":null,"abstract":"Lead telluride nanostructures were obtained on silicon substrates by thermal evaporation in vacuum. Growth occurred at three different distances between the evaporation source and the substrate. The distances between the evaporator and the evaporation source were 5 cm; 7.5 cm and 10 cm. Structural characteristics were studied using XRD, SEM, EDX, AFM analyses. These methods provided information about the crystal structure, morphology, microstructure and elemental composition of the material. X-ray diffraction analysis showed that thin films of lead telluride obtained by thermal evaporation in vacuum have a cubic crystal structure. This experimental work was carried out to determine the effect of distance on the structure of lead telluride (PbTe). During the experiment, the optimal modes for the formation of lead telluride (PbTe) nanostructures were determined, which was equal to d = 10 cm. It was found that lead telluride (PbTe) nanostructures are formed at this distance.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.2000,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of the distance between evaporation source and substrate on formation of lead telluride (PbTe) nanostructures by vacuum thermal evaporation method\",\"authors\":\"G. Amirbekova, Zh. K. Tolepov, N. Guseinova, M. A. Tulegenova, T. Kuanyshbekov\",\"doi\":\"10.15251/cl.2024.215.431\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lead telluride nanostructures were obtained on silicon substrates by thermal evaporation in vacuum. Growth occurred at three different distances between the evaporation source and the substrate. The distances between the evaporator and the evaporation source were 5 cm; 7.5 cm and 10 cm. Structural characteristics were studied using XRD, SEM, EDX, AFM analyses. These methods provided information about the crystal structure, morphology, microstructure and elemental composition of the material. X-ray diffraction analysis showed that thin films of lead telluride obtained by thermal evaporation in vacuum have a cubic crystal structure. This experimental work was carried out to determine the effect of distance on the structure of lead telluride (PbTe). During the experiment, the optimal modes for the formation of lead telluride (PbTe) nanostructures were determined, which was equal to d = 10 cm. It was found that lead telluride (PbTe) nanostructures are formed at this distance.\",\"PeriodicalId\":9710,\"journal\":{\"name\":\"Chalcogenide Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.2000,\"publicationDate\":\"2024-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chalcogenide Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/cl.2024.215.431\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chalcogenide Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/cl.2024.215.431","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

通过在真空中进行热蒸发，在硅衬底上获得了碲化镉纳米结构。生长是在蒸发源和基底之间的三个不同距离进行的。蒸发器和蒸发源之间的距离分别为 5 厘米、7.5 厘米和 10 厘米。使用 XRD、SEM、EDX 和 AFM 分析方法研究了结构特征。这些方法提供了有关材料的晶体结构、形态、微观结构和元素组成的信息。X 射线衍射分析表明，通过真空热蒸发获得的碲化铅薄膜具有立方晶体结构。这项实验工作旨在确定距离对碲化镉铅（PbTe）结构的影响。在实验过程中，确定了形成碲化镉铅（PbTe）纳米结构的最佳模式，即 d = 10 cm。实验发现，碲化镉铅（PbTe）纳米结构是在这个距离上形成的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Influence of the distance between evaporation source and substrate on formation of lead telluride (PbTe) nanostructures by vacuum thermal evaporation method

Lead telluride nanostructures were obtained on silicon substrates by thermal evaporation in vacuum. Growth occurred at three different distances between the evaporation source and the substrate. The distances between the evaporator and the evaporation source were 5 cm; 7.5 cm and 10 cm. Structural characteristics were studied using XRD, SEM, EDX, AFM analyses. These methods provided information about the crystal structure, morphology, microstructure and elemental composition of the material. X-ray diffraction analysis showed that thin films of lead telluride obtained by thermal evaporation in vacuum have a cubic crystal structure. This experimental work was carried out to determine the effect of distance on the structure of lead telluride (PbTe). During the experiment, the optimal modes for the formation of lead telluride (PbTe) nanostructures were determined, which was equal to d = 10 cm. It was found that lead telluride (PbTe) nanostructures are formed at this distance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.