Design and Characterization of a 53.5% Efficient Gallium Indium Phosphide-Based Optical Photovoltaic Converter under 637 nm Laser Irradiation at 10 W cm−2

High-power optical transmission (HPOT) technology has emerged as a promising alternative among far-field wireless power transmission approaches, enabling the transfer of kilowatts of power over kilometer-scale distances. Its exceptional adaptability allows operation in challenging scenarios where traditional electrical wiring is impractical or unfeasible, thereby opening up a vast array of potential applications previously considered utopian. An important pending assignment in enhancing the performance of laser-based HPOT systems is achieving efficient photovoltaic conversion of high power densities (≥10 W cm⁻²). In this sense, there is a pressing need for the advancement of optical photovoltaic converters (OPCs) capable of enduring intense monochromatic irradiances. This work presents the design optimization, manufacturing, and characterization processes of a gallium indium phosphide (GaInP)-based OPC under varying 637 nm laser power at room temperature. In addition, methods to evaluate the impact of temperature on performance are provided. The findings reveal a maximum efficiency of 53.5% at 10 W cm⁻², surpassing literature results for GaInP converters by over 9%_abs at those light intensities. Remarkably, this device withstands unmatched irradiances within GaInP OPCs up to 60 W cm⁻², maintaining 42.3% efficiency. This study aims to push forward the development of wide-bandgap power converters with recordbreaking efficiencies paving the way for new applications.