Natarajan V. Chidambaram, R. Jayalakshmi, C. S. Ramachandran, C. Ramachandra
{"title":"铝薄膜非晶硅介质涂层作为 LED 封装基底的热性能和流明性能比较研究","authors":"Natarajan V. Chidambaram, R. Jayalakshmi, C. S. Ramachandran, C. Ramachandra","doi":"10.1007/s12633-024-03043-3","DOIUrl":null,"url":null,"abstract":"<div><p>Lumen output and efficacy of high-power LEDs have crossed 200 lm/W, and the application of LEDs is growing beyond illumination into other areas like horticulture, UV-C LEDs for disinfection, and health-centric lighting where controlling parameters like the shift in wavelength, Color Rendering Index (CRI), etc. are important. Whether delivering high light output or controlled spectral designs for specific applications, thermal management of LEDs to lower the junction temperature is vital as it directly impacts the intended performance. The packaging substrate on which the LED is mounted plays a critical role in controlling the junction temperature. In this study, a thin film amorphous silicon (a-Si) dielectric coating on an aluminum (a-Si/Al) substrate followed by a 300 nm thick copper trace pattern for LED attachment using magnetron sputtering Physical Vapor Deposition (PVD) process has been carried out. Three other Packaging material substrates of FR4, Metal Core PCB (MCPCB), and Silicon using undoped Silicon wafer were fabricated, and a Nano-ceramic on Aluminum substrate was also procured for comparative Transient Thermal analysis study using Luxeon-Rebel Cool White LED. The Thermal resistance from the LED junction to the bottom of the a-Si/Al packaging substrate attached to the liquid temperature-controlled heat sink measured at 700 mA driving current, as per industry standard JEDEC 51–14 method, was 8.77 °C/W. Compared to this Thermal resistance value of a-Si/Al substrate, the thermal resistance of Silicon substrate, Nanoceramic on Aluminum, MCPCB, and FR4-based packaging substrates were 3.19%, 55.53%, 180.73%, and 405% higher with the corresponding Thermal resistance values of 9.05 °C/W, 13.64 °C/W, 24.62 °C/W and 44.34 °C/W respectively. Light Lumen output measurements for the substrates with the lowest and the highest thermal resistance, namely the (a-Si/Al) and FR4 substrates were also measured and the light output efficacy of the (a-Si/Al) substrate was 9.46% higher than the FR4 substrate. Also, the light output drop of the (a-Si/Al) substrate was only 1.66% compared against 10.66% for the FR4 substrate after 30 min of testing under no heatsink attachment conditions. Thus, the a-Si thin film-coated Aluminum as the LED packaging substrate can help lower the junction temperature with low thermal resistance and improve the color quality, efficacy, lumen depreciation, and reliability.</p></div>","PeriodicalId":2,"journal":{"name":"ACS Applied Bio Materials","volume":null,"pages":null},"PeriodicalIF":4.6000,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Comparative Thermal and Lumen Performance Study of Thin-film Amorphous Silicon Dielectric Coating on Aluminum as an LED Packaging Substrate\",\"authors\":\"Natarajan V. Chidambaram, R. Jayalakshmi, C. S. Ramachandran, C. Ramachandra\",\"doi\":\"10.1007/s12633-024-03043-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Lumen output and efficacy of high-power LEDs have crossed 200 lm/W, and the application of LEDs is growing beyond illumination into other areas like horticulture, UV-C LEDs for disinfection, and health-centric lighting where controlling parameters like the shift in wavelength, Color Rendering Index (CRI), etc. are important. Whether delivering high light output or controlled spectral designs for specific applications, thermal management of LEDs to lower the junction temperature is vital as it directly impacts the intended performance. The packaging substrate on which the LED is mounted plays a critical role in controlling the junction temperature. In this study, a thin film amorphous silicon (a-Si) dielectric coating on an aluminum (a-Si/Al) substrate followed by a 300 nm thick copper trace pattern for LED attachment using magnetron sputtering Physical Vapor Deposition (PVD) process has been carried out. Three other Packaging material substrates of FR4, Metal Core PCB (MCPCB), and Silicon using undoped Silicon wafer were fabricated, and a Nano-ceramic on Aluminum substrate was also procured for comparative Transient Thermal analysis study using Luxeon-Rebel Cool White LED. The Thermal resistance from the LED junction to the bottom of the a-Si/Al packaging substrate attached to the liquid temperature-controlled heat sink measured at 700 mA driving current, as per industry standard JEDEC 51–14 method, was 8.77 °C/W. Compared to this Thermal resistance value of a-Si/Al substrate, the thermal resistance of Silicon substrate, Nanoceramic on Aluminum, MCPCB, and FR4-based packaging substrates were 3.19%, 55.53%, 180.73%, and 405% higher with the corresponding Thermal resistance values of 9.05 °C/W, 13.64 °C/W, 24.62 °C/W and 44.34 °C/W respectively. Light Lumen output measurements for the substrates with the lowest and the highest thermal resistance, namely the (a-Si/Al) and FR4 substrates were also measured and the light output efficacy of the (a-Si/Al) substrate was 9.46% higher than the FR4 substrate. Also, the light output drop of the (a-Si/Al) substrate was only 1.66% compared against 10.66% for the FR4 substrate after 30 min of testing under no heatsink attachment conditions. 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引用次数: 0
摘要
大功率 LED 的流明输出和效率已超过 200 lm/W,而且 LED 的应用正从照明发展到其他领域,如园艺、用于消毒的 UV-C LED 和以健康为中心的照明,在这些领域中,波长偏移、显色指数 (CRI) 等参数的控制非常重要。无论是为特定应用提供高光输出还是可控光谱设计,降低 LED 结温的热管理都至关重要,因为它直接影响到预期性能。安装 LED 的封装基板在控制结温方面起着至关重要的作用。在这项研究中,采用磁控溅射物理气相沉积(PVD)工艺,在铝(a-Si/Al)基板上镀上一层非晶硅(a-Si)介质薄膜,然后再镀上 300 nm 厚的铜痕图案,用于安装 LED。此外,还使用 Luxeon-Rebel Cool White LED 制作了铝基板上的纳米陶瓷,用于瞬态热分析比较研究。根据行业标准 JEDEC 51-14 方法,在 700 mA 驱动电流下测量的 LED 结至连接到液态温控散热器的 a-Si/Al 封装基板底部的热阻为 8.77 °C/W。与硅铝基板的热阻值相比,硅基板、铝基纳米陶瓷、MCPCB 和 FR4 封装基板的热阻值分别高出 3.19%、55.53%、180.73% 和 405%,相应的热阻值分别为 9.05 °C/W、13.64 °C/W、24.62 °C/W 和 44.34 °C/W。还测量了热阻最低和最高的衬底(a-Si/Al)和 FR4 衬底的光流明输出,a-Si/Al 衬底的光输出效率比 FR4 衬底高 9.46%。此外,在不安装散热片的条件下,测试 30 分钟后,(a-硅/铝)衬底的光输出下降率仅为 1.66%,而 FR4 衬底的下降率为 10.66%。因此,将铝硅薄膜涂层作为 LED 封装基板有助于以较低的热阻降低结温,并改善色彩质量、功效、流明衰减和可靠性。
A Comparative Thermal and Lumen Performance Study of Thin-film Amorphous Silicon Dielectric Coating on Aluminum as an LED Packaging Substrate
Lumen output and efficacy of high-power LEDs have crossed 200 lm/W, and the application of LEDs is growing beyond illumination into other areas like horticulture, UV-C LEDs for disinfection, and health-centric lighting where controlling parameters like the shift in wavelength, Color Rendering Index (CRI), etc. are important. Whether delivering high light output or controlled spectral designs for specific applications, thermal management of LEDs to lower the junction temperature is vital as it directly impacts the intended performance. The packaging substrate on which the LED is mounted plays a critical role in controlling the junction temperature. In this study, a thin film amorphous silicon (a-Si) dielectric coating on an aluminum (a-Si/Al) substrate followed by a 300 nm thick copper trace pattern for LED attachment using magnetron sputtering Physical Vapor Deposition (PVD) process has been carried out. Three other Packaging material substrates of FR4, Metal Core PCB (MCPCB), and Silicon using undoped Silicon wafer were fabricated, and a Nano-ceramic on Aluminum substrate was also procured for comparative Transient Thermal analysis study using Luxeon-Rebel Cool White LED. The Thermal resistance from the LED junction to the bottom of the a-Si/Al packaging substrate attached to the liquid temperature-controlled heat sink measured at 700 mA driving current, as per industry standard JEDEC 51–14 method, was 8.77 °C/W. Compared to this Thermal resistance value of a-Si/Al substrate, the thermal resistance of Silicon substrate, Nanoceramic on Aluminum, MCPCB, and FR4-based packaging substrates were 3.19%, 55.53%, 180.73%, and 405% higher with the corresponding Thermal resistance values of 9.05 °C/W, 13.64 °C/W, 24.62 °C/W and 44.34 °C/W respectively. Light Lumen output measurements for the substrates with the lowest and the highest thermal resistance, namely the (a-Si/Al) and FR4 substrates were also measured and the light output efficacy of the (a-Si/Al) substrate was 9.46% higher than the FR4 substrate. Also, the light output drop of the (a-Si/Al) substrate was only 1.66% compared against 10.66% for the FR4 substrate after 30 min of testing under no heatsink attachment conditions. Thus, the a-Si thin film-coated Aluminum as the LED packaging substrate can help lower the junction temperature with low thermal resistance and improve the color quality, efficacy, lumen depreciation, and reliability.