Dingming Yang, Jiahao Xue, Jing Wang, Hao Wang, Shulong Wang, Xiaoyi Lei*, Junfeng Yan and Wu Zhao,
{"title":"通过分析和降低电流过冲改善 Ti/ZrO2/Pt RRAM 的均匀性","authors":"Dingming Yang, Jiahao Xue, Jing Wang, Hao Wang, Shulong Wang, Xiaoyi Lei*, Junfeng Yan and Wu Zhao, ","doi":"10.1021/acsaelm.4c00790","DOIUrl":null,"url":null,"abstract":"<p >Current overshoot in resistive random access memory (RRAM) can affect the stability and increase the power consumption of devices, which has become a great challenge in RRAM applications. In this study, we analyzed current overshoot in Ti/ZrO<sub>2</sub>/Pt devices and proposed a solution to improve device stability through high-temperature forming. The analysis results indicate that current overshoot is likely to occur in the RESET process when the SET voltage is too high, and temperature has an important impact on the conversion voltage of the Ti/ZrO<sub>2</sub>/Pt devices. Moreover, we established an electrothermal coupling model of the devices based on the oxygen vacancy conduction mechanism by COMSOL, which could obtain the distribution of the oxygen vacancy concentration in the dielectric layer during resistance conversion at different temperatures and electric fields. Based on the above analysis, by forming at high temperature, the overshoot current is reduced, and the stability of the switching voltage is improved successfully.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Uniformity Improvement of Ti/ZrO2/Pt RRAM by Analyzing and Reducing Current Overshoot\",\"authors\":\"Dingming Yang, Jiahao Xue, Jing Wang, Hao Wang, Shulong Wang, Xiaoyi Lei*, Junfeng Yan and Wu Zhao, \",\"doi\":\"10.1021/acsaelm.4c00790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Current overshoot in resistive random access memory (RRAM) can affect the stability and increase the power consumption of devices, which has become a great challenge in RRAM applications. In this study, we analyzed current overshoot in Ti/ZrO<sub>2</sub>/Pt devices and proposed a solution to improve device stability through high-temperature forming. The analysis results indicate that current overshoot is likely to occur in the RESET process when the SET voltage is too high, and temperature has an important impact on the conversion voltage of the Ti/ZrO<sub>2</sub>/Pt devices. Moreover, we established an electrothermal coupling model of the devices based on the oxygen vacancy conduction mechanism by COMSOL, which could obtain the distribution of the oxygen vacancy concentration in the dielectric layer during resistance conversion at different temperatures and electric fields. Based on the above analysis, by forming at high temperature, the overshoot current is reduced, and the stability of the switching voltage is improved successfully.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.4c00790\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c00790","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Uniformity Improvement of Ti/ZrO2/Pt RRAM by Analyzing and Reducing Current Overshoot
Current overshoot in resistive random access memory (RRAM) can affect the stability and increase the power consumption of devices, which has become a great challenge in RRAM applications. In this study, we analyzed current overshoot in Ti/ZrO2/Pt devices and proposed a solution to improve device stability through high-temperature forming. The analysis results indicate that current overshoot is likely to occur in the RESET process when the SET voltage is too high, and temperature has an important impact on the conversion voltage of the Ti/ZrO2/Pt devices. Moreover, we established an electrothermal coupling model of the devices based on the oxygen vacancy conduction mechanism by COMSOL, which could obtain the distribution of the oxygen vacancy concentration in the dielectric layer during resistance conversion at different temperatures and electric fields. Based on the above analysis, by forming at high temperature, the overshoot current is reduced, and the stability of the switching voltage is improved successfully.
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