双极 Nb3Cl8 场效应晶体管

IF 2.6 4区 化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR
Yixiang Lu, Kai Zhao, Tongyao Zhang, Baojuan Dong
{"title":"双极 Nb3Cl8 场效应晶体管","authors":"Yixiang Lu, Kai Zhao, Tongyao Zhang, Baojuan Dong","doi":"10.3390/magnetochemistry10060043","DOIUrl":null,"url":null,"abstract":"Field effect transistors based on few-layered van der Waals transition metal halide (TMH) Nb3Cl8 are studied in this work. Few-layered Nb3Cl8 exhibits typical N-type semiconducting behavior controlled by a Si gate, with the electrical signal enhancing as the thickness increases from 4.21 nm to 16.7 nm. Moreover, we find that the tunability of few-layered Nb3Cl8 FETs’ electrical transport properties can be significantly augmented through the use of an ionic liquid gate (or electrical double layer, EDL). This enhancement leads to a substantial increase in the on–off ratio by approximately a factor of 102, with the transfer curve modulated into a bipolar fashion. The emergence of such bipolar tunable characteristics in Nb3Cl8 FETs serves to enrich the electronic properties within the transition metal halide family, positioning Nb3Cl8 as a promising candidate for diverse applications spanning transistors, logic circuits, neuromorphic computing and spintronics.","PeriodicalId":18194,"journal":{"name":"Magnetochemistry","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bipolar Nb3Cl8 Field Effect Transistors\",\"authors\":\"Yixiang Lu, Kai Zhao, Tongyao Zhang, Baojuan Dong\",\"doi\":\"10.3390/magnetochemistry10060043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Field effect transistors based on few-layered van der Waals transition metal halide (TMH) Nb3Cl8 are studied in this work. Few-layered Nb3Cl8 exhibits typical N-type semiconducting behavior controlled by a Si gate, with the electrical signal enhancing as the thickness increases from 4.21 nm to 16.7 nm. Moreover, we find that the tunability of few-layered Nb3Cl8 FETs’ electrical transport properties can be significantly augmented through the use of an ionic liquid gate (or electrical double layer, EDL). This enhancement leads to a substantial increase in the on–off ratio by approximately a factor of 102, with the transfer curve modulated into a bipolar fashion. The emergence of such bipolar tunable characteristics in Nb3Cl8 FETs serves to enrich the electronic properties within the transition metal halide family, positioning Nb3Cl8 as a promising candidate for diverse applications spanning transistors, logic circuits, neuromorphic computing and spintronics.\",\"PeriodicalId\":18194,\"journal\":{\"name\":\"Magnetochemistry\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2024-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Magnetochemistry\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.3390/magnetochemistry10060043\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, INORGANIC & NUCLEAR\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Magnetochemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.3390/magnetochemistry10060043","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0

摘要

本文研究了基于少层范德华过渡金属卤化物(TMH)Nb3Cl8 的场效应晶体管。少层 Nb3Cl8 在硅栅极的控制下表现出典型的 N 型半导体行为,随着厚度从 4.21 纳米增加到 16.7 纳米,电信号也随之增强。此外,我们还发现,通过使用离子液体栅极(或电双层栅极,EDL),可以显著提高少层 Nb3Cl8 FET 的电传输特性可调性。这种增强可将导通-关断比大幅提高约 102 倍,并将传输曲线调制成双极方式。Nb3Cl8 FET 中出现的这种双极可调特性丰富了过渡金属卤化物家族的电子特性,使 Nb3Cl8 成为晶体管、逻辑电路、神经形态计算和自旋电子学等各种应用的理想候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bipolar Nb3Cl8 Field Effect Transistors
Field effect transistors based on few-layered van der Waals transition metal halide (TMH) Nb3Cl8 are studied in this work. Few-layered Nb3Cl8 exhibits typical N-type semiconducting behavior controlled by a Si gate, with the electrical signal enhancing as the thickness increases from 4.21 nm to 16.7 nm. Moreover, we find that the tunability of few-layered Nb3Cl8 FETs’ electrical transport properties can be significantly augmented through the use of an ionic liquid gate (or electrical double layer, EDL). This enhancement leads to a substantial increase in the on–off ratio by approximately a factor of 102, with the transfer curve modulated into a bipolar fashion. The emergence of such bipolar tunable characteristics in Nb3Cl8 FETs serves to enrich the electronic properties within the transition metal halide family, positioning Nb3Cl8 as a promising candidate for diverse applications spanning transistors, logic circuits, neuromorphic computing and spintronics.
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来源期刊
Magnetochemistry
Magnetochemistry Chemistry-Chemistry (miscellaneous)
CiteScore
3.90
自引率
11.10%
发文量
145
审稿时长
11 weeks
期刊介绍: Magnetochemistry (ISSN 2312-7481) is a unique international, scientific open access journal on molecular magnetism, the relationship between chemical structure and magnetism and magnetic materials. Magnetochemistry publishes research articles, short communications and reviews. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. Therefore, there is no restriction on the length of the papers. The full experimental details must be provided so that the results can be reproduced.
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