二硫化物材料中 Mo 和 W 化合物的合成与表征

IF 1.7 4区 化学
Sunyoung Shin, Seongmin Yeo, So Jeong Yeo, Taek-Mo Chung, Chang Gyoun Kim, Bo Keun Park
{"title":"二硫化物材料中 Mo 和 W 化合物的合成与表征","authors":"Sunyoung Shin,&nbsp;Seongmin Yeo,&nbsp;So Jeong Yeo,&nbsp;Taek-Mo Chung,&nbsp;Chang Gyoun Kim,&nbsp;Bo Keun Park","doi":"10.1002/bkcs.12880","DOIUrl":null,"url":null,"abstract":"<p>MoS<sub>2</sub> and WS<sub>2</sub> are spotlighted as fungible materials of graphene that can be used in electronic devices owing to being semiconductors with indirect and direct band gaps. Precursors (Mo(N<sup>t</sup>Bu)<sub>2</sub>(S<sup>t</sup>Bu)<sub>2</sub> (<b>1</b>), W(N<sup>t</sup>Bu)<sub>2</sub>(S<sup>t</sup>Bu)<sub>2</sub> (<b>2</b>)) suitable for the deposition of these materials were synthesized and characterized. The molecular structures of <b>1</b> and <b>2</b> exhibit a tetrahedral geometry according to single-crystal x-ray crystallography. Thermogravimetric analyses of <b>1</b> and <b>2</b> showed two-step weight loss. The residues from each step of <b>1</b> were MoS<sub>3</sub> and MoS<sub>2</sub>, and these results were consistent with the subsequent deposition results of <b>1</b>. We successfully established a PEALD-MoS<sub>2</sub> process using <b>1</b> and H<sub>2</sub>S plasma as the precursor and reactant, respectively, at relatively low temperatures of 150–300 °C without any post-sulfurization process. A temperature-dependent selective deposition of MoS<sub><i>x</i></sub> phases was observed with the growth of amorphous MoS<sub>3</sub> films (150–200 °C), and crystalline MoS<sub>2</sub> films (250–350 °C).</p>","PeriodicalId":54252,"journal":{"name":"Bulletin of the Korean Chemical Society","volume":"45 7","pages":"576-583"},"PeriodicalIF":1.7000,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis and characterization of Mo and W compounds for disulfide materials\",\"authors\":\"Sunyoung Shin,&nbsp;Seongmin Yeo,&nbsp;So Jeong Yeo,&nbsp;Taek-Mo Chung,&nbsp;Chang Gyoun Kim,&nbsp;Bo Keun Park\",\"doi\":\"10.1002/bkcs.12880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>MoS<sub>2</sub> and WS<sub>2</sub> are spotlighted as fungible materials of graphene that can be used in electronic devices owing to being semiconductors with indirect and direct band gaps. Precursors (Mo(N<sup>t</sup>Bu)<sub>2</sub>(S<sup>t</sup>Bu)<sub>2</sub> (<b>1</b>), W(N<sup>t</sup>Bu)<sub>2</sub>(S<sup>t</sup>Bu)<sub>2</sub> (<b>2</b>)) suitable for the deposition of these materials were synthesized and characterized. The molecular structures of <b>1</b> and <b>2</b> exhibit a tetrahedral geometry according to single-crystal x-ray crystallography. Thermogravimetric analyses of <b>1</b> and <b>2</b> showed two-step weight loss. The residues from each step of <b>1</b> were MoS<sub>3</sub> and MoS<sub>2</sub>, and these results were consistent with the subsequent deposition results of <b>1</b>. We successfully established a PEALD-MoS<sub>2</sub> process using <b>1</b> and H<sub>2</sub>S plasma as the precursor and reactant, respectively, at relatively low temperatures of 150–300 °C without any post-sulfurization process. A temperature-dependent selective deposition of MoS<sub><i>x</i></sub> phases was observed with the growth of amorphous MoS<sub>3</sub> films (150–200 °C), and crystalline MoS<sub>2</sub> films (250–350 °C).</p>\",\"PeriodicalId\":54252,\"journal\":{\"name\":\"Bulletin of the Korean Chemical Society\",\"volume\":\"45 7\",\"pages\":\"576-583\"},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bulletin of the Korean Chemical Society\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/bkcs.12880\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of the Korean Chemical Society","FirstCategoryId":"92","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/bkcs.12880","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

MoS2 和 WS2 是石墨烯的可替代材料,由于它们是具有间接和直接带隙的半导体,因此可用于电子设备。我们合成并表征了适合沉积这些材料的前驱体(Mo(NtBu)2(StBu)2 (1)、W(NtBu)2(StBu)2 (2))。根据单晶 X 射线晶体学,1 和 2 的分子结构呈四面体几何形状。对 1 和 2 的热重分析表明,其失重分为两个步骤。我们成功地建立了一种 PEALD-MoS2 工艺,它分别使用 1 和 H2S 等离子体作为前驱体和反应物,温度相对较低,为 150-300 ℃,不需要任何后硫化过程。在无定形 MoS3 薄膜(150-200 ℃)和结晶 MoS2 薄膜(250-350 ℃)的生长过程中,观察到了 MoSx 相随温度变化的选择性沉积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and characterization of Mo and W compounds for disulfide materials

MoS2 and WS2 are spotlighted as fungible materials of graphene that can be used in electronic devices owing to being semiconductors with indirect and direct band gaps. Precursors (Mo(NtBu)2(StBu)2 (1), W(NtBu)2(StBu)2 (2)) suitable for the deposition of these materials were synthesized and characterized. The molecular structures of 1 and 2 exhibit a tetrahedral geometry according to single-crystal x-ray crystallography. Thermogravimetric analyses of 1 and 2 showed two-step weight loss. The residues from each step of 1 were MoS3 and MoS2, and these results were consistent with the subsequent deposition results of 1. We successfully established a PEALD-MoS2 process using 1 and H2S plasma as the precursor and reactant, respectively, at relatively low temperatures of 150–300 °C without any post-sulfurization process. A temperature-dependent selective deposition of MoSx phases was observed with the growth of amorphous MoS3 films (150–200 °C), and crystalline MoS2 films (250–350 °C).

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来源期刊
Bulletin of the Korean Chemical Society
Bulletin of the Korean Chemical Society Chemistry-General Chemistry
自引率
23.50%
发文量
182
期刊介绍: The Bulletin of the Korean Chemical Society is an official research journal of the Korean Chemical Society. It was founded in 1980 and reaches out to the chemical community worldwide. It is strictly peer-reviewed and welcomes Accounts, Communications, Articles, and Notes written in English. The scope of the journal covers all major areas of chemistry: analytical chemistry, electrochemistry, industrial chemistry, inorganic chemistry, life-science chemistry, macromolecular chemistry, organic synthesis, non-synthetic organic chemistry, physical chemistry, and materials chemistry.
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