{"title":"以 In0.27Al0.73N 合金薄膜为电子传输层的双向紫外/紫外异质结发光二极管","authors":"Zhiang Yue, Xian Zhang, Enqin Zhao, Guojiao Xiang, Jinming Zhang, Yidan Jin, Wenwen Jin, Jingwen Shu, Lukai Wang, Hangyu He, Wenxuan Ye, Hui Wang, Yang Zhao","doi":"10.1016/j.jallcom.2024.175193","DOIUrl":null,"url":null,"abstract":"<div><p>In this paper, the p-GaN/n-In<sub>0.27</sub>Al<sub>0.73</sub>N heterojunction light-emitting diode (LED) was fabricated by radio frequency magnetron sputtering (RF-MS) and the electroluminescence (EL) characteristics of the p-GaN/n-In<sub>0.27</sub>Al<sub>0.73</sub>N heterojunction diode was investigated. Based on the preparation of the In<sub>X</sub>Al<sub>1-X</sub>N thin films at different substrate temperatures (Ts), the crystal structure, optical and electrical properties were investigated by XRD, SEM and other material characterization techniques. With increasing Ts, the grain size and surface morphology of the In<sub>X</sub>Al<sub>1-X</sub>N thin films change dramatically. The film has the best optical and electrical properties when the Ts is 300℃. On the basis of this, the compositional content of indium in the In<sub>X</sub>Al<sub>1-X</sub>N film was calculated to be 0.27. The heterojunction LED was fabricated on a commercial p-GaN substrate and the In<sub>0.27</sub>Al<sub>0.73</sub>N alloy film. The EL was successfully achieved at various forward and reverse voltages at room temperature and the temperature-dependent EL has been investigated. Furthermore, research is being conducted on the characteristics of the interface of p-GaN/n-In<sub>0.27</sub>Al<sub>0.73</sub>N heterojunction and the elucidation of the light-emitting mechanism of diode. The present work uses a simple and low-cost RF-MS method to fabricate UV/Violet bidirectional drive p-GaN/n-In<sub>0.27</sub>Al<sub>0.73</sub>N heterojunction LED, which provides a new reference for the fabrication of LED using In<sub>X</sub>Al<sub>1-X</sub>N alloy material.</p></div>","PeriodicalId":344,"journal":{"name":"Journal of Alloys and Compounds","volume":"1001 ","pages":"Article 175193"},"PeriodicalIF":6.3000,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer\",\"authors\":\"Zhiang Yue, Xian Zhang, Enqin Zhao, Guojiao Xiang, Jinming Zhang, Yidan Jin, Wenwen Jin, Jingwen Shu, Lukai Wang, Hangyu He, Wenxuan Ye, Hui Wang, Yang Zhao\",\"doi\":\"10.1016/j.jallcom.2024.175193\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this paper, the p-GaN/n-In<sub>0.27</sub>Al<sub>0.73</sub>N heterojunction light-emitting diode (LED) was fabricated by radio frequency magnetron sputtering (RF-MS) and the electroluminescence (EL) characteristics of the p-GaN/n-In<sub>0.27</sub>Al<sub>0.73</sub>N heterojunction diode was investigated. Based on the preparation of the In<sub>X</sub>Al<sub>1-X</sub>N thin films at different substrate temperatures (Ts), the crystal structure, optical and electrical properties were investigated by XRD, SEM and other material characterization techniques. With increasing Ts, the grain size and surface morphology of the In<sub>X</sub>Al<sub>1-X</sub>N thin films change dramatically. The film has the best optical and electrical properties when the Ts is 300℃. On the basis of this, the compositional content of indium in the In<sub>X</sub>Al<sub>1-X</sub>N film was calculated to be 0.27. The heterojunction LED was fabricated on a commercial p-GaN substrate and the In<sub>0.27</sub>Al<sub>0.73</sub>N alloy film. The EL was successfully achieved at various forward and reverse voltages at room temperature and the temperature-dependent EL has been investigated. Furthermore, research is being conducted on the characteristics of the interface of p-GaN/n-In<sub>0.27</sub>Al<sub>0.73</sub>N heterojunction and the elucidation of the light-emitting mechanism of diode. The present work uses a simple and low-cost RF-MS method to fabricate UV/Violet bidirectional drive p-GaN/n-In<sub>0.27</sub>Al<sub>0.73</sub>N heterojunction LED, which provides a new reference for the fabrication of LED using In<sub>X</sub>Al<sub>1-X</sub>N alloy material.</p></div>\",\"PeriodicalId\":344,\"journal\":{\"name\":\"Journal of Alloys and Compounds\",\"volume\":\"1001 \",\"pages\":\"Article 175193\"},\"PeriodicalIF\":6.3000,\"publicationDate\":\"2024-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Alloys and Compounds\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925838824017808\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Alloys and Compounds","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925838824017808","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer
In this paper, the p-GaN/n-In0.27Al0.73N heterojunction light-emitting diode (LED) was fabricated by radio frequency magnetron sputtering (RF-MS) and the electroluminescence (EL) characteristics of the p-GaN/n-In0.27Al0.73N heterojunction diode was investigated. Based on the preparation of the InXAl1-XN thin films at different substrate temperatures (Ts), the crystal structure, optical and electrical properties were investigated by XRD, SEM and other material characterization techniques. With increasing Ts, the grain size and surface morphology of the InXAl1-XN thin films change dramatically. The film has the best optical and electrical properties when the Ts is 300℃. On the basis of this, the compositional content of indium in the InXAl1-XN film was calculated to be 0.27. The heterojunction LED was fabricated on a commercial p-GaN substrate and the In0.27Al0.73N alloy film. The EL was successfully achieved at various forward and reverse voltages at room temperature and the temperature-dependent EL has been investigated. Furthermore, research is being conducted on the characteristics of the interface of p-GaN/n-In0.27Al0.73N heterojunction and the elucidation of the light-emitting mechanism of diode. The present work uses a simple and low-cost RF-MS method to fabricate UV/Violet bidirectional drive p-GaN/n-In0.27Al0.73N heterojunction LED, which provides a new reference for the fabrication of LED using InXAl1-XN alloy material.
期刊介绍:
The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.