以 In0.27Al0.73N 合金薄膜为电子传输层的双向紫外/紫外异质结发光二极管

IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Zhiang Yue, Xian Zhang, Enqin Zhao, Guojiao Xiang, Jinming Zhang, Yidan Jin, Wenwen Jin, Jingwen Shu, Lukai Wang, Hangyu He, Wenxuan Ye, Hui Wang, Yang Zhao
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引用次数: 0

摘要

本文采用射频磁控溅射(RF-MS)技术制备了 p-GaN/n-In0.27Al0.73N 异质结发光二极管(LED),并研究了 p-GaN/n-In0.27Al0.73N 异质结二极管的电致发光(EL)特性。在不同衬底温度(Ts)下制备 InXAl1-XN 薄膜的基础上,通过 XRD、SEM 等材料表征技术研究了其晶体结构、光学和电学特性。随着 Ts 的增加,InXAl1-XN 薄膜的晶粒尺寸和表面形貌发生了显著变化。当 Ts 为 300℃时,薄膜的光学和电学性能最佳。在此基础上,计算出 InXAl1-XN 薄膜中的铟含量为 0.27。异质结 LED 是在商用 p-GaN 衬底和 In0.27Al0.73N 合金薄膜上制造的。在室温下的各种正向和反向电压条件下,成功实现了 EL,并对随温度变化的 EL 进行了研究。此外,还在研究 p-GaN/n-In0.27Al0.73N 异质结的界面特性以及阐明二极管的发光机理。本研究采用简单、低成本的 RF-MS 方法制备了紫外/紫光双向驱动 p-GaN/n-In0.27Al0.73N 异质结 LED,为使用 InXAl1-XN 合金材料制备 LED 提供了新的参考。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer

In this paper, the p-GaN/n-In0.27Al0.73N heterojunction light-emitting diode (LED) was fabricated by radio frequency magnetron sputtering (RF-MS) and the electroluminescence (EL) characteristics of the p-GaN/n-In0.27Al0.73N heterojunction diode was investigated. Based on the preparation of the InXAl1-XN thin films at different substrate temperatures (Ts), the crystal structure, optical and electrical properties were investigated by XRD, SEM and other material characterization techniques. With increasing Ts, the grain size and surface morphology of the InXAl1-XN thin films change dramatically. The film has the best optical and electrical properties when the Ts is 300℃. On the basis of this, the compositional content of indium in the InXAl1-XN film was calculated to be 0.27. The heterojunction LED was fabricated on a commercial p-GaN substrate and the In0.27Al0.73N alloy film. The EL was successfully achieved at various forward and reverse voltages at room temperature and the temperature-dependent EL has been investigated. Furthermore, research is being conducted on the characteristics of the interface of p-GaN/n-In0.27Al0.73N heterojunction and the elucidation of the light-emitting mechanism of diode. The present work uses a simple and low-cost RF-MS method to fabricate UV/Violet bidirectional drive p-GaN/n-In0.27Al0.73N heterojunction LED, which provides a new reference for the fabrication of LED using InXAl1-XN alloy material.

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来源期刊
Journal of Alloys and Compounds
Journal of Alloys and Compounds 工程技术-材料科学:综合
CiteScore
11.10
自引率
14.50%
发文量
5146
审稿时长
67 days
期刊介绍: The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.
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