脉冲持续时间对激光高掺杂黑硅特性的影响

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Patrick Mc Kearney, Sören Schäfer, Xiaolong Liu, Simon Paulus, Ingo Lebershausen, Behrad Radfar, Ville Vähänissi, Hele Savin, Stefan Kontermann
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引用次数: 0

摘要

研究了三种不同脉冲持续时间(100 fs、1 和 10 ps)对激光超掺杂黑硅形成的影响,包括表面形貌、亚带隙吸收率、硫浓度曲线以及 Al2O3 表面钝化后的有效少数载流子寿命。在不同脉冲持续时间的超掺杂后,通过 I-V 测量比较了通过超掺杂层的电流流动行为。在绝对亚带隙吸收率相同的条件下,脉冲持续时间从 100 fs 增加到 10 ps 会导致硫浓度曲线变浅。脉冲持续时间从 100 fs 时的 0.19 J cm-2 到 1 ps 时的 0.21 J cm-2 和 10 ps 时的 0.34 J cm-2 时,烧蚀阈值不断增加,从而解释了这一结果。形成具有较浅掺杂剖面的同等吸收层可降低接触电阻和/或薄层电阻。尽管局部硫浓度较高,但通过 Al2O3 表面钝化样品上的准稳态光电导衰减测量,样品的载流子寿命并没有缩短。这项研究表明,在硅的激光超掺杂过程中,长达 10 ps 的长脉冲可产生先进的层特性,有望在潜在的设备应用中大显身手。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Impact of Pulse Duration on the Properties of Laser Hyperdoped Black Silicon

Impact of Pulse Duration on the Properties of Laser Hyperdoped Black Silicon

The impact of three different pulse durations (100 fs, 1, and 10 ps) on the formation of laser hyperdoped black silicon with respect to surface morphology, sub-bandgap absorptance, the sulfur concentration profile, and the effective minority carrier lifetime after Al2O3 surface passivation is investigated. The current flow behavior is compared through the hyperdoped layer by I–V measurements after hyperdoping with different pulse durations. For conditions that give the same absolute sub-bandgap absorptance, an increase in pulse duration from 100 fs to 10 ps results in a shallower sulfur concentration profile. Findings are explained by an increasing ablation threshold from 0.19 J cm−2 for a pulse duration of 100 fs to 0.21 J cm−2 for 1 ps and 0.34 J cm−2 for 10 ps. The formation of an equally absorbing layer with a shallower doping profile results in a reduction in contact and/or sheet resistance. Despite the higher local sulfur concentration, the samples show no decrease in carrier lifetime measured by quasi-steady-state photoconductance decay on Al2O3 surface-passivated samples. The investigation shows that longer pulses of up to 10 ps during laser hyperdoping of silicon result in advanced layer properties that promise to be beneficial in a potential device application.

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