Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field-effect transistors, but the perfect sp² C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor for constructing complementary metal–oxide–semiconductor electronics. Most importantly, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) is first demonstrated based on an individual partial-filling CsPbBr₃/CNT and exhibits a subthreshold swing of 35 mV dec⁻¹ with a high on-state current of up to 4.9 µA per tube and an on/off current ratio of up to 10⁵ at room temperature. The quasi-BG TFET based on the CsPbBr₃/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption integrated circuits.