用于 CMOS 首发 MEMS 最后集成的低热预算电活性厚多晶硅。

IF 7.3 1区 工程技术 Q1 INSTRUMENTS & INSTRUMENTATION
Microsystems & Nanoengineering Pub Date : 2024-06-06 eCollection Date: 2024-01-01 DOI:10.1038/s41378-024-00678-5
Aron Michael, Ian Yao-Hsiang Chuang, Chee Yee Kwok, Kazuo Omaki
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引用次数: 0

摘要

在互补金属氧化物半导体(CMOS)上构建微机电系统(MEMS)需要低热预算、电活性和厚的多晶硅薄膜。然而,这些多晶硅薄膜的形成是该领域的一项挑战。本文首次报道了利用电子束蒸发(UHVEE)技术在超高真空条件(约 10-9 托)下沉积原位掺磷硅薄膜的开发过程。该工艺可制备出具有电活性、完全结晶、低应力、光滑、厚且热预算低的多晶硅薄膜。研究了掺磷 UHVEE 多晶硅薄膜的晶体学、机械和电气特性。这些薄膜与本征和掺硼的 UHVEE 硅薄膜进行了比较。拉曼光谱、X 射线衍射 (XRD)、透射电子显微镜 (TEM) 和原子力显微镜 (AFM) 被用于晶体学和表面形态学研究。晶圆曲率、悬臂偏转曲线和共振频率测量用于研究试样的机械性能。此外,还进行了电阻率测量,以研究薄膜的电学特性。开发了 UHVEE 多晶硅的高垂直、高纵横比微加工技术。在低于 500 °C 的温度下,设计、模拟、制造并表征了由 20μm 厚的原位掺磷 UHVEE 薄膜组成的致动器和惯性传感器的梳状驱动结构。研究结果首次证明,UHVEE 多晶硅能够以较低的热预算实现机械和电气功能的 MEMS 器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Low-thermal-budget electrically active thick polysilicon for CMOS-First MEMS-last integration.

Low-thermal-budget electrically active thick polysilicon for CMOS-First MEMS-last integration.

Low-thermal-budget, electrically active, and thick polysilicon films are necessary for building a microelectromechanical system (MEMS) on top of a complementary metal oxide semiconductor (CMOS). However, the formation of these polysilicon films is a challenge in this field. Herein, for the first time, the development of in situ phosphorus-doped silicon films deposited under ultrahigh-vacuum conditions (~10-9 Torr) using electron-beam evaporation (UHVEE) is reported. This process results in electrically active, fully crystallized, low-stress, smooth, and thick polysilicon films with low thermal budgets. The crystallographic, mechanical, and electrical properties of phosphorus-doped UHVEE polysilicon films are studied. These films are compared with intrinsic and boron-doped UHVEE silicon films. Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used for crystallographic and surface morphological investigations. Wafer curvature, cantilever deflection profile and resonance frequency measurements are employed to study the mechanical properties of the specimens. Moreover, resistivity measurements are conducted to investigate the electrical properties of the films. Highly vertical, high-aspect-ratio micromachining of UHVEE polysilicon has been developed. A comb-drive structure is designed, simulated, fabricated, and characterized as an actuator and inertial sensor comprising 20-μm-thick in situ phosphorus-doped UHVEE films at a temperature less than 500 °C. The results demonstrate for the first time that UHVEE polysilicon uniquely allows the realization of mechanically and electrically functional MEMS devices with low thermal budgets.

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来源期刊
Microsystems & Nanoengineering
Microsystems & Nanoengineering Materials Science-Materials Science (miscellaneous)
CiteScore
12.00
自引率
3.80%
发文量
123
审稿时长
20 weeks
期刊介绍: Microsystems & Nanoengineering is a comprehensive online journal that focuses on the field of Micro and Nano Electro Mechanical Systems (MEMS and NEMS). It provides a platform for researchers to share their original research findings and review articles in this area. The journal covers a wide range of topics, from fundamental research to practical applications. Published by Springer Nature, in collaboration with the Aerospace Information Research Institute, Chinese Academy of Sciences, and with the support of the State Key Laboratory of Transducer Technology, it is an esteemed publication in the field. As an open access journal, it offers free access to its content, allowing readers from around the world to benefit from the latest developments in MEMS and NEMS.
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