透明导电层对液晶器件功能的影响:AZO、FTO 和 ITO 的比较

Q2 Engineering
Vera Marinova , Stefan Petrov , Dimitrina Petrova , Blagovest Napoleonov , Nguyen Hong Minh Chau , Yu Pin Lan , Velichka Strijkova , Ken Yuh Hsu , Dimitre Dimitrov , Shiuan Huei Lin
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引用次数: 0

摘要

高透明和高导电层的集成在各种下一代光电技术的发展中起着至关重要的作用。在这里,我们展示了通过原子层沉积技术(ALD)沉积的掺铝氧化锌(AZO)与市面上销售的掺氟氧化锡(FTO)和掺铟氧化锡(ITO)透明导电氧化物(TCO)层的光学、电学和润湿性能的比较。比较并讨论了它们应用于液晶(LC)器件组件时对电光调制行为的影响。事实证明,AZO 层的性能完全可以与商用 FTO 和 ITO 层媲美,并验证了对下一代无铟锡氧化物 (ITO) 技术的高度需求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Effect of transparent conductive layers on the functionality of liquid crystal devices: Comparison of AZO, FTO and ITO

Effect of transparent conductive layers on the functionality of liquid crystal devices: Comparison of AZO, FTO and ITO

The integration of highly transparent and highly conductive layers plays a crucial role in the advancement of various next-generation optoelectronic technologies. Here, we demonstrate a comparison of optical, electrical and wettability properties of Aluminum-doped Zinc Oxide (AZO) deposited by Atomic Layer Deposition Technique (ALD) with commercially available Fluorine-doped Tin Oxide (FTO) and Indium-doped Tin Oxide (ITO) Transparent Conductive Oxide (TCO) layers. Their impact on the electro-optical modulation behavior when applied in Liquid Crystal (LC) device assemblies are compared and discussed. The AZO layers performance prove that are fully competitive to the commercial FTO and ITO layers and verify the high demand for the next generation indium tin oxide (ITO)-free technology.

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来源期刊
Optical Materials: X
Optical Materials: X Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
73
审稿时长
91 days
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