新型异质电双金属（DM）-三栅极-隧道场效应晶体管（FET）的设计与分析：实现超低功耗的途径

IF 1.6 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Transactions on Electrical and Electronic Materials Pub Date : 2024-06-03 DOI:10.1007/s42341-024-00550-3

A. S. Geege, T. S. A. Samuel, P. Vimala, T. Ananth Kumar

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design and Analysis of Novel Heterodielectric Double Metal(DM)-Triple Gate-Tunnel Field-Effect Transistors(FET): A Path to Ultra-Low Power Implementations

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来源期刊

Transactions on Electrical and Electronic Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

4.30

自引率

0.00%

发文量

期刊介绍： The main purpose of Transactions on Electrical and Electronic Materials (Trans. Electr. Electron. Mater. : TEEM) is to provide an open forum to report and share significant new findings on electrical and electronic materials for the materials research communities.The topics covered by the journal include but not limited to new semiconductor materials and devices, electronic ceramics, electrical insulation materials, thin film devices/sensors, display/optical devices, superconducting magnetic materials and devices, nanomaterials and nanodevices, photovoltaic materials and devices, and disaster prevention materials.Transactions on Electrical and Electronic Materials enables professionals in research and industry to keep track of up-to-date developments in the above-mentioned fields and their importance for future developments and success.