计算高浓度硅同位素的 Q 级联参数

IF 0.4 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Russian Physics Journal Pub Date : 2024-06-03 DOI:10.1007/s11182-024-03187-0

A. A. Orlov, M. V. Petrov, A. V. Ovezova

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引用次数: 0

摘要

本文介绍了 Q 级联模型中硅同位素两级分离的计算。获得了 Q 级联的进料流量曲线，并确定了硅同位素的各阶段浓度分布。结果表明，在进料流量为 35 克/秒的情况下，可以获得三种高富集（99%）的产品，即32.31 克/秒 28Si、1.61 克/秒 29Si 和 1.08 克/秒 30Si。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Calculation of Q-Cascade Parameters for Highly-enriched Silicon Isotopes

The paper presents calculations of the two-stage separation of silicon isotopes in Q-cascade models. Feed flow profiles are obtained for Q-cascades, and the concentration distribution by stages is determined for silicon isotopes. It is shown that three highly-enriched (>99%) products can be obtained at a 35 g/s feed flow, namely: 32.31 g/s ²⁸Si, 1.61 g/s ²⁹Si, and 1.08 g/s ³⁰Si.

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来源期刊

Russian Physics Journal PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

50.00%

发文量

208

审稿时长

3-6 weeks

期刊介绍： Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.