Kaveh Eyvazi, Hamid Reza Yaghoubi, Mohammad Azim Karami
{"title":"新型叠层栅极氧化物 L 型隧道场效应晶体管","authors":"Kaveh Eyvazi, Hamid Reza Yaghoubi, Mohammad Azim Karami","doi":"10.1007/s10825-024-02183-4","DOIUrl":null,"url":null,"abstract":"<div><p>In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is proposed. The stacked gate oxide structure incorporates high-k and SiO<sub>2</sub> dielectrics. The high-k dielectric, specifically, contributes to a robust electric field at the source/channel junction. This augmented electric field results in more energy band bending and a thinner tunneling barrier. As a result, the proposed device shows the drain current of 0.224 mA/μm, OFF-current of 1.3 × 10<sup>–17</sup> A/μm, threshold voltage of 0.62 V and average subthreshold swing of 34 mV/decade, in comparison with the conventional LTFET. Moreover, this paper demonstrates the role of both Shockley–Read–Hall generation and trap assisted tunneling in the subthreshold swing degradation due to the existence of trap inside the silicon band gap.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"740 - 750"},"PeriodicalIF":2.2000,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new stacked gate oxide L-shaped tunnel field effect transistor\",\"authors\":\"Kaveh Eyvazi, Hamid Reza Yaghoubi, Mohammad Azim Karami\",\"doi\":\"10.1007/s10825-024-02183-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is proposed. The stacked gate oxide structure incorporates high-k and SiO<sub>2</sub> dielectrics. The high-k dielectric, specifically, contributes to a robust electric field at the source/channel junction. This augmented electric field results in more energy band bending and a thinner tunneling barrier. As a result, the proposed device shows the drain current of 0.224 mA/μm, OFF-current of 1.3 × 10<sup>–17</sup> A/μm, threshold voltage of 0.62 V and average subthreshold swing of 34 mV/decade, in comparison with the conventional LTFET. Moreover, this paper demonstrates the role of both Shockley–Read–Hall generation and trap assisted tunneling in the subthreshold swing degradation due to the existence of trap inside the silicon band gap.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"23 4\",\"pages\":\"740 - 750\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-024-02183-4\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02183-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
本文提出了一种新型叠层栅极氧化物 L 型隧道场效应晶体管（LTFET）。这种叠层栅极氧化物结构采用了高 K 电介质和二氧化硅电介质。高 k 电介质尤其有助于在源极/沟道结形成强大的电场。这种增强的电场导致更多的能带弯曲和更薄的隧穿势垒。因此，与传统的 LTFET 相比，该器件的漏极电流为 0.224 mA/μm，关断电流为 1.3 × 10-17 A/μm，阈值电压为 0.62 V，平均阈下摆幅为 34 mV/decade。此外，由于硅带隙内存在陷阱，本文证明了肖克利-雷德-霍尔效应产生和陷阱辅助隧穿在亚阈值摆幅衰减中的作用。
A new stacked gate oxide L-shaped tunnel field effect transistor
In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is proposed. The stacked gate oxide structure incorporates high-k and SiO2 dielectrics. The high-k dielectric, specifically, contributes to a robust electric field at the source/channel junction. This augmented electric field results in more energy band bending and a thinner tunneling barrier. As a result, the proposed device shows the drain current of 0.224 mA/μm, OFF-current of 1.3 × 10–17 A/μm, threshold voltage of 0.62 V and average subthreshold swing of 34 mV/decade, in comparison with the conventional LTFET. Moreover, this paper demonstrates the role of both Shockley–Read–Hall generation and trap assisted tunneling in the subthreshold swing degradation due to the existence of trap inside the silicon band gap.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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