{"title":"二维 HfSe2 模板的稳定碱卤化物气相辅助化学气相沉积及其异质结构的可控氧化作用","authors":"Wenlong Chu, Xilong Zhou, Ze Wang, Xiulian Fan, Xuehao Guo, Cheng Li, Jianling Yue, Fangping Ouyang, Jiong Zhao, Yu Zhou","doi":"10.1007/s11467-024-1414-7","DOIUrl":null,"url":null,"abstract":"<div><p>Two-dimensional hafnium-based semiconductors and their heterostructures with native oxides have been shown unique physical properties and potential electronic and optoelectronic applications. However, the scalable synthesis methods for ultrathin layered hafnium-based semiconductor laterally epitaxy growth and its heterostructure are still restricted, also for the understanding of its formation mechanism. Herein, we report the stable sublimation of alkali halide vapor assisted synthesis strategy for high-quality 2D HfSe<sub>2</sub> nanosheets via chemical vapor deposition. Single-crystalline ultrathin 2D HfSe<sub>2</sub> nanosheets were systematically grown by tuning the growth parameters, reaching the lateral size of 6–40 µm and the thickness down to 4.5 nm. The scalable amorphous HfO<sub>2</sub> and HfSe<sub>2</sub> heterostructures were achieved by the controllable oxidation, which benefited from the approximate zero Gibbs free energy of unstable 2D HfSe<sub>2</sub> templates. The crystal structure, elemental, and time dependent Raman characterization were carried out to understand surface precipitated Se atoms and the formation of amorphous Hf–O bonds, confirming the slow surface oxidation and lattice incorporation of oxygen atoms. The relatively smooth surface roughness and electrical potential change of HfO<sub>2</sub>–HfSe<sub>2</sub> heterostructures indicate the excellent interface quality, which helps obtain the high performance memristor with high on/off ratio of 10<sup>5</sup> and long retention period over 9000 s. Our work introduces a new vapor catalysts strategy for the synthesis of lateral 2D HfSe<sub>2</sub> nanosheets, also providing the scalable oxidation of the Hf-based heterostructures for 2D electronic devices.\n</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":573,"journal":{"name":"Frontiers of Physics","volume":"19 3","pages":""},"PeriodicalIF":6.5000,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Stable alkali halide vapor assisted chemical vapor deposition of 2D HfSe2 templates and controllable oxidation of its heterostructures\",\"authors\":\"Wenlong Chu, Xilong Zhou, Ze Wang, Xiulian Fan, Xuehao Guo, Cheng Li, Jianling Yue, Fangping Ouyang, Jiong Zhao, Yu Zhou\",\"doi\":\"10.1007/s11467-024-1414-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Two-dimensional hafnium-based semiconductors and their heterostructures with native oxides have been shown unique physical properties and potential electronic and optoelectronic applications. However, the scalable synthesis methods for ultrathin layered hafnium-based semiconductor laterally epitaxy growth and its heterostructure are still restricted, also for the understanding of its formation mechanism. Herein, we report the stable sublimation of alkali halide vapor assisted synthesis strategy for high-quality 2D HfSe<sub>2</sub> nanosheets via chemical vapor deposition. Single-crystalline ultrathin 2D HfSe<sub>2</sub> nanosheets were systematically grown by tuning the growth parameters, reaching the lateral size of 6–40 µm and the thickness down to 4.5 nm. The scalable amorphous HfO<sub>2</sub> and HfSe<sub>2</sub> heterostructures were achieved by the controllable oxidation, which benefited from the approximate zero Gibbs free energy of unstable 2D HfSe<sub>2</sub> templates. The crystal structure, elemental, and time dependent Raman characterization were carried out to understand surface precipitated Se atoms and the formation of amorphous Hf–O bonds, confirming the slow surface oxidation and lattice incorporation of oxygen atoms. The relatively smooth surface roughness and electrical potential change of HfO<sub>2</sub>–HfSe<sub>2</sub> heterostructures indicate the excellent interface quality, which helps obtain the high performance memristor with high on/off ratio of 10<sup>5</sup> and long retention period over 9000 s. Our work introduces a new vapor catalysts strategy for the synthesis of lateral 2D HfSe<sub>2</sub> nanosheets, also providing the scalable oxidation of the Hf-based heterostructures for 2D electronic devices.\\n</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":573,\"journal\":{\"name\":\"Frontiers of Physics\",\"volume\":\"19 3\",\"pages\":\"\"},\"PeriodicalIF\":6.5000,\"publicationDate\":\"2024-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Frontiers of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11467-024-1414-7\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers of Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11467-024-1414-7","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Stable alkali halide vapor assisted chemical vapor deposition of 2D HfSe2 templates and controllable oxidation of its heterostructures
Two-dimensional hafnium-based semiconductors and their heterostructures with native oxides have been shown unique physical properties and potential electronic and optoelectronic applications. However, the scalable synthesis methods for ultrathin layered hafnium-based semiconductor laterally epitaxy growth and its heterostructure are still restricted, also for the understanding of its formation mechanism. Herein, we report the stable sublimation of alkali halide vapor assisted synthesis strategy for high-quality 2D HfSe2 nanosheets via chemical vapor deposition. Single-crystalline ultrathin 2D HfSe2 nanosheets were systematically grown by tuning the growth parameters, reaching the lateral size of 6–40 µm and the thickness down to 4.5 nm. The scalable amorphous HfO2 and HfSe2 heterostructures were achieved by the controllable oxidation, which benefited from the approximate zero Gibbs free energy of unstable 2D HfSe2 templates. The crystal structure, elemental, and time dependent Raman characterization were carried out to understand surface precipitated Se atoms and the formation of amorphous Hf–O bonds, confirming the slow surface oxidation and lattice incorporation of oxygen atoms. The relatively smooth surface roughness and electrical potential change of HfO2–HfSe2 heterostructures indicate the excellent interface quality, which helps obtain the high performance memristor with high on/off ratio of 105 and long retention period over 9000 s. Our work introduces a new vapor catalysts strategy for the synthesis of lateral 2D HfSe2 nanosheets, also providing the scalable oxidation of the Hf-based heterostructures for 2D electronic devices.
期刊介绍:
Frontiers of Physics is an international peer-reviewed journal dedicated to showcasing the latest advancements and significant progress in various research areas within the field of physics. The journal's scope is broad, covering a range of topics that include:
Quantum computation and quantum information
Atomic, molecular, and optical physics
Condensed matter physics, material sciences, and interdisciplinary research
Particle, nuclear physics, astrophysics, and cosmology
The journal's mission is to highlight frontier achievements, hot topics, and cross-disciplinary points in physics, facilitating communication and idea exchange among physicists both in China and internationally. It serves as a platform for researchers to share their findings and insights, fostering collaboration and innovation across different areas of physics.